STPSC6H065 Datasheet, PDF (2/14 Pages) STMicroelectronics – 650 V power Schottky silicon carbide diode

Characteristics
1
Characteristics
STPSC6H065
Table 2. Absolute ratings (limiting values at 25 °C unless otherwise specified)
Symbol
Parameter
Value Unit
V_RRM
I_F(RMS)
I_F(AV)
I_FSM
Repetitive peak reverse voltage
Forward rms current
Average forward
current
TO-220AC, DPAK, D²PAK, T_c = 135 °C⁽¹⁾, DC
TO-220AC Ins, T_c = 110 °C⁽¹⁾, DC
Surge non repetitive
forward current
t_p = 10 ms sinusoidal, T_c = 25 °C
t_p = 10 ms sinusoidal, T_c = 125 °C
t_p = 10 µs square, T_c = 25 °C
650
V
22
A
6
A
60
52
A
400
I_FRM
Repetitive peak
forward current
TO-220AC, DPAK, D²PAK, T_c = 135 °C⁽¹⁾, T_j = 175 °C, δ = 0.1
TO-220AC Ins, T_c = 110 °C⁽¹⁾, T_j = 175 °C, δ = 0.1
25
A
T_stg Storage temperature range
T_j Operating junction temperature⁽²⁾
-55 to +175 °C
-40 to +175 °C
1. Value based on R_th(j-c) max.
2.
d----P-----t--o----t
dTj
<
R-----t---h---(^-1-j----–^----a----)
condition to avoid thermal runaway for a diode on its own heatsink
Symbol
R_th(j-c) Junction to case
Table 3. Thermal resistance
Parameter
Typ. value
TO-220AC, DPAK, D²PAK
1.6
TO-220AC Ins
2.9
Max. value
2.4
4.2
Unit
°C/W
Symbol
Table 4. Static electrical characteristics
Parameter
Tests conditions
Min. Typ.
I_R ⁽¹⁾ Reverse leakage current
V_F ⁽²⁾ Forward voltage drop
1. t_p = 10 ms, δ < 2%
2. t_p = 500 µs, δ < 2%
T_j = 25 °C
T_j = 150 °C
T_j = 25 °C
T_j = 150 °C
V_R = V_RRM
I_F = 6 A
-
5
-
50
-
1.56
-
1.98
Max.
60
250
1.75
2.5
Unit
µA
V
To evaluate the conduction losses use the following equation: P = 1.35 x I_F(AV) + 0.192 x I_F²_(RMS)
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