STPS30L45C_10 Datasheet, PDF (2/12 Pages) STMicroelectronics – Low drop power Schottky rectifier

Characteristics
1
Characteristics
STPS30L45C
Table 2. Absolute Ratings (limiting values, per diode)
Symbol
Parameter
V_RRM Repetitive peak reverse voltage
I_F(RMS) Forward rms current
I_F(AV)
Average forward
current
TO-220FPAB
TO-220AB, TO-247,
I²PAK, D₂PAK
T_c =110 °C, δ = 0.5
T_c = 135 °C, δ = 0.5
Per diode
Per device
I_FSM Surge non repetitive forward current
t_p = 10 ms Sinusoidal
I_RRM Repetitive peak reverse current
t_p = 2 µs square F = 1 kHz
I_RSM Non repetitive peak reverse current
t_p = 100 µs square
P_ARM Repetitive peak avalanche power
t_p = 1 µs T_j = 25 °C
T_stg Storage temperature range
T_j Maximum operating junction temperature ⁽¹⁾
dV/dt Critical rate of rise of reverse voltage
1.
d----P-----t--o----t
dTj
<
------------1-------------
Rth(j – a)
condition
to
avoid
thermal
runaway
for
a
diode
on
its
own
heatsink
Value
Unit
45
V
30
A
15
A
30
220
1
3
6000
-65 to + 150
150
10000
A
A
A
W
°C
°C
V/µs
Table 3. Thermal resistances
Symbol
Parameter
R_th(j-c)
R_th(c)
Junction to case
Coupling
TO-220FPAB
Per diode
Total
TO-220AB, TO-247, I²PAK, D²PAK ^{Per diode}
Total
TO-220FPAB
TO-220AB, TO-247, I²PAK, D²PAK
Value
4
3.2
1.60
0.85
2.5
0.10
Unit
°C/W
°C/W
When the diodes 1 and 2 are used simultaneously:
ΔT_j(diode 1) = P(diode1) x R_th(j-c)(Per diode) + P(diode 2) x R_th(c)
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