STPS2L40AF Datasheet, PDF (2/10 Pages) STMicroelectronics – Low drop power Schottky rectifier

Characteristics
1
Characteristics
STPS2L40
Table 2. Absolute ratings (limiting values)
Symbol
Parameter
Value
V_RRM Repetitive peak reverse voltage
40
SMB
T_L = 130 °C δ = 0.5
I_F(AV) Average forward current SMBflat T_L = 140 °C δ = 0.5
2
SMAflat T_L = 130 °C δ = 0.5
I_FSM
Surge non repetitive forward current t_p = 10 ms sinusoidal
75
P_ARM Repetitive peak avalanche power t_p = 1 µs T_j = 25 °C
2200
T_stg
Storage temperature range
T_j
Operating junction temperature ⁽¹⁾
-65 to + 150
150
1.
d----P-----t--o----t
dTj
<
R-----t--h----(^-1--j--–^-----a----)
condition
to
avoid
thermal
runaway
for
a
diode
on
its
own
heatsink
Table 3. Thermal resistances
Symbol
Parameter
Value
R_{th (j-l)} Junction to lead
SMB
20
SMBflat
10
SMAflat
20
Unit
V
A
A
W
°C
°C
Unit
°C/W
Table 4. Static electrical characteristics
Symbol
Tests conditions
Min. Typ. Max. Unit
I_R(1) Reverse leakage current
T_j = 25 °C
T_j = 100 °C
V_R = 40 V
T_j = 125 °C
T_j = 25 °C
T_j = 125 °C
I_F = 1 A
V_F(1) Forward voltage drop
T_j = 25 °C
T_j = 125 °C
I_F = 2 A
T_j = 25 °C
T_j = 125 °C
I_F = 4 A
1. Pulse test: t_p = 380 µs, δ < 2
To evaluate the conduction losses use the following equation:
P = 0.22 x I_F(AV) + 0.06 I_F2(RMS)
220 µA
20
mA
38 80
mA
0.39
0.25 0.28
V
0.43
0.31 0.34
0.5
V
0.39 0.45
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