STPS10L60C Datasheet, PDF (2/8 Pages) STMicroelectronics – Power Schottky rectifier

Characteristics
1
Characteristics
STPS10L60C
Symbol
Parameter
Value Unit
V_RRM Repetitive peak reverse voltage
60
V
I_F(RMS) RMS forward current
30
A
I_F(AV)
Average forward
current
TO220FPAB T_C = 130° C Per diode
5
A
δ = 0.5
Per device
10
I_FSM
I_RRM
P_ARM
Surge non repetitive forward current
Repetitive peak reverse current
Repetitive peak avalanche power
tp = 10 ms Sinusoidal
tp = 2 µs square F=1 kHz
tp = 1 µs T_j = 25° C
T_stg Storage temperature range
T_j
Maximum operating junction temperature⁽¹⁾
dV/dt Critical rate of rise reverse voltage
1.
d----P-----t--o----t
dTj
<
------------1-------------
Rth(j – a)
thermal runaway condition for a diode on its own heatsink
Table 1. Thermal resistance
180
1
4000
-65 to +
175
150
10000
A
A
W
°C
°C
V/µs
Symbol
Parameter
Value
Unit
R_{th (j-c)}
Junction to case
TO-220FPAB
Per diode
4.5
Total
3.5
R_{th (c)}
Coupling
2.5
When the diodes 1 and 2 are used simultaneously :
ΔTj(diode 1) = P(diode1) x R_th(j-c)(Per diode) + P(diode 2) x R_th(c)
° C/W
° C/W
Table 2.
Symbol
Static electrical characteristics (per diode)
Parameter
Tests Conditions
Min. Typ. Max. Unit
I_R ⁽¹⁾
Reverse leakage current
T_j = 25° C
T_j = 125° C
V_R = V_RRM
T_j = 25° C
I_F = 5 A
V_F ⁽¹⁾ Forward voltage drop
T_j = 125° C
T_j = 25° C
I_F = 5 A
I_F = 10 A
T_j = 125° C
I_F = 10 A
1. Pulse test : tp = 380 µs, δ < 2%
To evaluate the conduction losses use the following equation:
P = 0.44 x I_F(AV) + 0.0091x I_F2(RMS)
220 µA
45 60
mA
0.55
0.43 0.52
V
0.67
0.55 0.64
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