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STP20NM60 Datasheet, PDF (2/15 Pages) STMicroelectronics – N-CHANNEL 600V - 0.25ohm - 20A TO-220/FP/D2PAK/I2PAK MDmesh Power MOSFET
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STP20NM60 - STP20NM60FP - STB20NM60 - STW20NM60 - STB20NM60-1
Table 3: Absolute Maximum ratings
Symbol
Parameter
VDS Drain-source Voltage (VGS = 0)
VDGR Drain-gate Voltage (RGS = 20 kΩ)
VGS Gate- source Voltage
ID
Drain Current (continuous) at TC = 25°C
ID
Drain Current (continuous) at TC = 100°C
IDM ( ) Drain Current (pulsed)
PTOT Total Dissipation at TC = 25°C
Derating Factor
dv/dt (1) Peak Diode Recovery voltage slope
VISO Insulation Winthstand Voltage (DC)
Tstg
Storage Temperature
Tj
Max. Operating Junction Temperature
( ) Pulse width limited by safe operating area
(1) ISD ≤ 20 A, di/dt ≤ 400 A/µs, VDD ≤ V(BR)/DSS, Tj ≤ TJMAX
(*) Limited only by maximum temperature allowed
Table 4: Thermal Data
Rthj-case
Rthj-amb
Tl
Thermal Resistance Junction-case Max
Thermal Resistance Junction-ambient Max
Maximum Lead Temperature For Soldering Purpose
Value
TO-220/D²PAK/
I²PAK/TO-247
TO-220FP
600
600
±30
20
20 (*)
12.6
12.6 (*)
80
80 (*)
192
45
1.2
0.36
15
--
2500
-65 to 150
150
Unit
V
V
V
A
A
A
W
W/°C
V/ns
V
°C
°C
TO-220/D²PAK/
I²PAK/TO-247
0.65
62.5
300
TO-220FP
2.8
Unit
°C/W
°C/W
°C
Table 5: Avalanche Characteristics
Symbol
Parameter
IAR
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by Tj max)
EAS Single Pulse Avalanche Energy
(starting Tj = 25 °C, ID = IAR, VDD = 50 V)
Max. Value
Unit
10
A
650
mJ
ELECTRICAL CHARACTERISTICS (TCASE =25°C UNLESS OTHERWISE SPECIFIED)
Table 6: On/Off
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
V(BR)DSS Drain-source
ID = 250 µA, VGS = 0
600
V
Breakdown Voltage
IDSS
Zero Gate Voltage
VDS = Max Rating
Drain Current (VGS = 0) VDS= Max Rating, TC= 125°C
1
µA
10
µA
IGSS
Gate-body Leakage
Current (VDS = 0)
VGS = ± 30V
±100
µA
VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250 µA
3
4
5
V
RDS(on) Static Drain-source On VGS = 10V, ID = 10 A
Resistance
0.25
0.29
Ω
2/15
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