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STP11NC40 Datasheet, PDF (2/10 Pages) STMicroelectronics – N-CHANNEL 400V - 0.44ohm - 9.5A TO-220/TO-220FP PowerMESH™II Power MOSFET
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STP11NC40, STP11NC40FP
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
VDS
Drain-source Voltage (VGS = 0)
VDGR
Drain-gate Voltage (RGS = 20 kΩ)
VGS
Gate- source Voltage
ID
Drain Current (continuos) at TC = 25°C
ID
Drain Current (continuos) at TC = 100°C
IDM (l) Drain Current (pulsed)
PTOT
Total Dissipation at TC = 25°C
Derating Factor
dv/dt (1) Peak Diode Recovery voltage slope
VISO
Insulation Withstand Voltage (DC)
Tj
Operating Junction Temperature
Tstg
Storage Temperature
(l) Pulse width limited by safe operating area
(1) ISD ≤9.5A, di/dt ≤100A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX.
(*) Limited only by maximum temperature allowed
Value
STP11NC40
STP11NC40FP
400
400
± 30
9.5
9.5 (*)
6
6 (*)
38
38 (*)
120
30
0.96
0.24
3.5
-
2500
-55 to 150
-55 to 150
Unit
V
V
V
A
A
A
W
W/°C
V/ns
V
°C
°C
THERMAL DATA
Rthj-case
Rthj-amb
Tl
Thermal Resistance Junction-case Max
Thermal Resistance Junction-ambient Max
Maximum Lead Temperature For Soldering Purpose
TO-220
1.04
62.5
300
TO-220FP
4.1
°C/W
°C/W
°C
AVALANCHE CHARACTERISTICS
Symbol
Parameter
IAR
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by Tj max)
EAS
Single Pulse Avalanche Energy
(starting Tj = 25 °C, ID = IAR, VDD = 50 V)
Max Value
9.5
300
Unit
A
mJ
ELECTRICAL CHARACTERISTICS (TCASE =25°C UNLESS OTHERWISE SPECIFIED)
ON/OFF
Symbol
Parameter
Test Conditions
Min. Typ. Max. Unit
V(BR)DSS Drain-source
ID = 250 µA, VGS = 0
400
V
Breakdown Voltage
IDSS
Zero Gate Voltage
Drain Current (VGS = 0)
VDS = Max Rating
VDS = Max Rating, TC = 125 °C
1
µA
50
µA
IGSS
Gate-body Leakage
Current (VDS = 0)
VGS = ± 30V
±100
nA
VGS(th) Gate Threshold Voltage
VDS = VGS, ID = 250µA
2
3
4
V
RDS(on)
Static Drain-source On
Resistance
VGS = 10V, ID = 5 A
0.44 0.55
Ω
2/10
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