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| STL6NK55Z Datasheet, PDF (2/8 Pages) STMicroelectronics – N-CHANNEL 550V - 1.2ohm- 5.2A PowerFLAT™ Zener-Protected SuperMESH™Power MOSFET | |||
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STL6NK55Z
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
VDS
Drain-source Voltage (VGS = 0)
VDGR
Drain-gate Voltage (RGS = 20 kâ¦)
VGS
Gate- source Voltage
ID (2)
Drain Current (continuous) at TC = 25°C (Steady State)
Drain Current (continuous) at TC = 100°C
IDM (2) Drain Current (pulsed)
PTOT (2) Total Dissipation at TC = 25°C (Steady State)
PTOT (1) Total Dissipation at TC = 25°C (Steady State)
Derating Factor (2)
VESD(G-S) Gate source ESD(HBM-C=100pF, R=1.5Kâ¦)
dv/dt (4) Peak Diode Recovery voltage slope
Tstg
Storage Temperature
Tj
Max. Operating Junction Temperature
THERMAL DATA
Symbol
Parameter
Rthj-F Thermal Resistance Junction-Foot (Drain)
Rthj-amb (2) Thermal Resistance Junction-ambient
Note: 1. The value is rated according to Rthj-F.
2. When Mounted on FR-4 Board of 1inch2, 2 oz Cu
3. Pulse width limited by safe operating area
4. ISD<5.7A, di/dt<300A/µs, VDD<V(BR)DSS, TJ<TJMAX
AVALANCHE CHARACTERISTICS
Symbol
Parameter
IAR
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by Tj max)
EAS
Single Pulse Avalanche Energy
(starting Tj = 25 °C, ID = IAR, VDD = 50 V)
GATE-SOURCE ZENER DIODE
Symbol
Parameter
BVGSO
Gate-Source Breakdown
Voltage
Test Conditions
Igs=± 1mA (Open Drain)
Value
550
550
± 30
0.86
0.54
3.44
2.5
75
0.02
3000
4.5
â55 to 150
Max.
1.67
50
Unit
V
V
V
A
A
A
W
W
W/°C
V/ns
V/ns
°C
Unit
°C/W
°C/W
Max Value
5.2
160
Unit
A
mJ
Min.
30
Typ.
Max.
Unit
V
PROTECTION FEATURES OF GATE-TO-SOURCE ZENER DIODES
The built-in back-to-back Zener diodes have specifically been designed to enhance not only the deviceâs
ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be
applied from gate to source. In this respect the Zener voltage is appropriate to achieve an efficient and
cost-effective intervention to protect the deviceâs integrity. These integrated Zener diodes thus avoid the
usage of external components.
2/8
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