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| STL20NM20N Datasheet, PDF (2/9 Pages) STMicroelectronics – N-CHANNEL 200V - 0.088ohm - 20A PowerFLAT ULTRA LOW GATE CHARGE MDmesh II MOSFET | |||
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STL20NM20N
Table 3: Absolute Maximum ratings
Symbol
Parameter
VDS
Drain-source Voltage (VGS = 0)
VDGR
Drain-gate Voltage (RGS = 20 kâ¦)
VGS
Gate- source Voltage
ID (1)
Drain Current (continuous) at TC = 25°C (Steady State)
Drain Current (continuous) at TC = 100°C
IDM (3) Drain Current (pulsed)
PTOT (2) Total Dissipation at TC = 25°C (Steady State)
PTOT (1) Total Dissipation at TC = 25°C (Steady State)
Derating Factor (2)
dv/dt (4) Peak Diode Recovery voltage slope
Table 4: Thermal Data
Symbol
Parameter
Rthj-c Thermal Resistance Junction-case
Rthj-pcb (2) Thermal Resistance Junction-pcb
Tj
Max. Operating Junction Temperature
Tstg
Storage Temperature
Table 5: Avalanche Characteristics
Symbol
Parameter
IAS
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by Tj max)
EAS
Single Pulse Avalanche Energy
(starting Tj = 25 °C, ID = IAR, VDD = 35 V)
Value
200
200
± 30
20
12.3
80
2.5
80
0.02
10
Unit
V
V
V
A
A
A
W
W
W/°C
V/ns
Typ.
35
Max.
1.56
50
-55 to 150
Unit
°C/W
°C/W
°C
Max. Value
Unit
20
A
380
mJ
ELECTRICAL CHARACTERISTICS (TCASE =25°C UNLESS OTHERWISE SPECIFIED)
Table 6: On/Off
Symbol
Parameter
Test Conditions
Min.
Typ.
Max. Unit
V(BR)DSS Drain-source
ID = 1 mA, VGS = 0
200
V
Breakdown Voltage
IDSS
Zero Gate Voltage
VDS = Max Rating
Drain Current (VGS = 0) VDS = Max Rating, TC = 125 °C
1
µA
10
µA
IGSS
Gate-body Leakage
Current (VDS = 0)
VGS = ± 30 V
±100
nA
VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250 µA
3
4
5
V
RDs(on)
Static Drain-source On
Resistance
VGS = 10V, ID = 10 A
0.088 0.105
â¦
2/9
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