STGW30NB60HD Datasheet, PDF (2/8 Pages) STMicroelectronics – N-CHANNEL 30A - 600V TO-247 PowerMESH IGBT

STGW30NB60HD
THERMAL DATA
R_thj-case
R _{th j -a mb}
R_thc-h
Thermal Resistance Junction-case
Thermal Resistance Junction-ambient
Thermal Resistance Case-heatsink
Max
Max
Typ
0 .6 6
30
0. 1
o_C/W
oC/W
o_C/W
ELECTRICAL CHARACTERISTICS (T_j = 25 ^oC unless otherwise specified)
OFF
Symbol
V BR(CES)
I_CES
I_GES
Parameter
Collector-Emitt er
Breakdown Voltage
Collector cut-off
(V_GE = 0)
Gate-Emitter Leakage
Current (V_CE = 0)
Test Conditions
IC = 250 µA VGE = 0
V_CE = Max Rat ing
V_CE = Max Rat ing
V_GE = ± 20 V
T_j = 25 ^oC
T_j = 125 ^oC
V_CE = 0
Min.
600
Typ. Max. Unit
V
250
µA
2000 µA
± 100 nA
ON (∗)
Symbol
V_GE(th)
VCE(SAT )
Parameter
Gate Threshold
V ol ta ge
Collector-Emitt er
Saturation Voltage
Test Conditions
V_CE = V_GE I_C = 250 µA
Min. Typ. Max. Unit
3
5
V
VGE = 15 V IC = 30 A
V_GE = 15 V I_C = 30 A T_j = 125 ^oC
2.2
2.8
V
1.8
V
DYNAMIC
Symbol
Parameter
Test Conditions
Min. Typ. Max. Unit
g_{f s}
Forward
Transconductance
V_CE =25 V I_C = 30 A
20
S
C_ies
C_{o es}
C_res
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
V_CE = 25 V f = 1 MHz V_GE = 0
2300
pF
250
pF
60
pF
Q_G Total Gate Charge
V_CE = 480 V I_C = 30 A V_GE = 15 V
150
nC
Q_GE Gat e-Emitter Charge
15
nC
Q_GC Gat e-Collector Charge
72
nC
I_CL
Latching Current
V_clamp = 480 V
R_G=10 Ω
120
A
T_j = 150 ^oC
SWITCHING ON
Symbol
t_d(on)
t_r
( di / dt ) _{o n}
E_{o n}
Parameter
Delay Time
Rise Time
Turn-on Current Slope
Turn-on
Switching Losses
Test Conditions
V_CC = 480 V
V_GE= 15 V
I_C = 30 A
R_G = 10Ω
V_CC = 480 V
RG = 10 Ω
T_j = 125 ^oC
I_C = 30 A
VGE = 15 V
Min.
Typ.
15
35
1000
1000
Max.
U nit
ns
ns
A/µs
µJ
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