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| STGW20NC60VD Datasheet, PDF (2/11 Pages) STMicroelectronics – N-CHANNEL 30A - 600V TO-247 Very Fast PowerMESH IGBT | |||
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STGW20NC60VD
Table 3: Absolute Maximum ratings
Symbol
Parameter
VCES
Collector-Emitter Voltage (VGS = 0)
VECR
Reverse Battery Protection
VGE
Gate-Emitter Voltage
IC
Collector Current (continuous) at 25°C (#)
IC
Collector Current (continuous) at 100°C (#)
ICM (1) Collector Current (pulsed)
If
Diode RMS Forward Current at TC = 25°C
PTOT
Total Dissipation at TC = 25°C
Derating Factor
Tstg
Storage Temperature
Tj
Operating Junction Temperature
(1)Pulse width limited by max. junction temperature.
Value
600
20
± 20
60
30
100
30
200
1.6
â 55 to 150
Symbol
V
V
V
A
A
A
A
W
W/°C
°C
Table 4: Thermal Data
Min.
Typ.
Max.
Rthj-case Thermal Resistance Junction-case (IGBT)
--
--
0.625
°C/W
Rthj-case Thermal Resistance Junction-case (Diode)
--
--
1.5
°C/W
Rthj-amb Thermal Resistance Junction-ambient
--
--
50
°C/W
TL
Maximum Lead Temperature for Soldering
Purpose (1.6 mm from case, for 10 sec.)
300
°C
ELECTRICAL CHARACTERISTICS (TCASE =25°C UNLESS OTHERWISE SPECIFIED)
Table 5: Off
Symbol
Parameter
Test Conditions
Min.
Typ.
Max. Unit
VBR(CES) Collectro-Emitter Breakdown IC = 1 mA, VGE = 0
600
V
Voltage
ICES
Collector-Emitter Leakage VGE = Max Rating
Current (VCE = 0)
Tc=25°C
Tc=125°C
10
µA
1
mA
IGES
Gate-Emitter Leakage
Current (VCE = 0)
VGE = ± 20 V , VCE = 0
± 100 nA
Table 6: On
Symbol
Parameter
VGE(th) Gate Threshold Voltage
VCE(SAT) Collector-Emitter Saturation
Voltage
(#) Calculated according to the iterative formula:
Test Conditions
VCE= VGE, IC= 250 µA
VGE= 15 V, IC= 20A, Tj= 25°C
VGE= 15 V, IC= 20A,
Tj= 125°C
Min.
3.75
Typ.
1.8
1.7
Max.
5.75
2.5
Unit
V
V
V
IC (TC) = -R----T----H-----J----â----C------Ã----T-V---J-C--M---E---A-S----AX----T-â----(-T-M---C---A-----X----)--(--T----C----,---I--C----)
2/11
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