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STE50DE100 Datasheet, PDF (2/9 Pages) STMicroelectronics – HYBRID EMITTER SWITCHED BIPOLAR TRANSISTOR ESBT 1000 V - 50 A - 0.026 W POWER MODULE
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STE50DE100
Table 3: Absolute Maximum Ratings
Symbol
VCS(SS)
VBS(OS)
VSB(OS)
VGS
IC
ICM
IB
IBM
Ptot
Tstg
TJ
VISO
Parameter
Collector-Source Voltage (VBS = VGS = 0 V)
Base-Source Voltage (IC= 0, VGS = 0 V)
Source-Base Voltage (IC= 0, VGS = 0 V)
Gate-Source Voltage
Collector Current
Collector Peak Current (tp < 5ms)
Base Current
Base Peak Current (tp < 1ms)
Total Dissipation at TC ≤ 25 oC
Storage Temperature
Max. Operating Junction Temperature
Insulation Withstand Voltage (AC-RMS) from All Four Leads to
External Heatsink
Value
1000
40
12
± 20
50
150
10
50
160
-65 to 150
150
2500
Unit
V
V
V
V
A
A
A
A
W
°C
°C
V
Table 4: Thermal Data
Rthj-case Thermal Resistance Junction-Case
Max
Rthc-h Thermal Resistance Case-heatsink with Conductive Grease
Applied
Max
0.78
0.05
oC/W
oC/W
Table 5: Electrical Characteristics (Tcase = 25 oC unless otherwise specified)
Symbol
Parameter
Test Conditions
Min. Typ.
ICS(SS) Collector-Source Current
(VBS = VGS = 0 V)
IBS(OS) Base-Source Current
(IC = 0 , VGS = 0 V)
ISB(OS) Source-Base Current
(IC = 0 , VGS = 0 V)
IGS(OS) Gate-Source Leakage
VCS(ON) Collector-Source ON
Voltage
hFE DC Current Gain
VBS(ON) Base-Source ON Voltage
VGS(th) Gate Threshold Voltage
Ciss Input Capacitance
QGS(tot) Gate-Source Charge
VCS(SS) = 1000 V
VBS(OS) = 40 V
VSB(OS) = 10 V
VGS = ± 20 V
IC = 50 A IB = 10 A VGS = 10 V
IC = 30 A IB = 3 A VGS = 10 V
(see figure 14)
IC = 50 A VCS = 1 V VGS = 10 V
IC = 30 A
IC = 50 A
VCS = 1 V VGS = 10 V
IB = 10 A VGS = 10 V
IC = 30 A IB = 3 A
VBS = VGS
VCS = 25 V
VGS = 10 V
IB = 250 mA
f = 1MHZ
VGS = VCB = 0
VCS = 25 V
VGS = 10 V
VCB = 0
IC = 50 A
1.3
1.1
3
6
2.2
1.4
3
3.7
2500
60
Max.
100
10
100
500
7
13
4.5
Unit
mA
mA
mA
nA
V
V
V
V
V
pF
nC
2/9
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