STE26NA90 Datasheet, PDF (2/8 Pages) STMicroelectronics – N - CHANNEL 900V - 0.25ohm- 26A - ISOTOP FAST POWER MOSFET

STE26NA90
THERMAL DATA
R_thj-case
R_thc-h
Thermal Resistance Junction-case
Thermal Resistance Case-heatsink With Conductive
Grease Applied
Max
Max
0.27
0.05
o_C/W
o_C/W
AVALANCHE CHARACTERISTICS
Symbo l
I_AR
E_AS
P a ra met er
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by T_j max)
Single Pulse Avalanche Energy
(starting T_j = 25 ^oC, I_D = I_AR, V_DD = 50 V)
Max Value
13
3000
Unit
A
mJ
ELECTRICAL CHARACTERISTICS (T_case = 25 ^oC unless otherwise specified)
OFF
Symbo l
V (BR)D SS
I_DSS
IGSS
P ar am et e r
Test Conditions
Dr ain- s our c e
Breakdown Voltage
ID = 500 µA VGS = 0
Zero Gate Voltage
V_DS = Max Rat ing
Drain Current (V_GS = 0) V_DS = Max Rat ing
T_c = 125 ^oC
Gate-body Leakage
Current (V_DS = 0)
VGS = ± 30 V
Min.
900
Typ. Max.
250
1000
± 200
Unit
V
µA
µA
nA
ON (∗)
Symbo l
V_GS(th)
R_DS(on)
I_{D(o n)}
P ar am et e r
Test Conditions
Gat e Threshold Voltage V_DS = V_GS
Static Drain-source On V_GS = 10 V
Resistance
I_D = 1 mA
I_D = 13 A
On State Drain Current V_DS > I_{D(o n)} x R_{DS(on )max}
V_GS = 10 V
Min.
2.25
Typ.
3
0.25
Max.
3.75
0.3
Unit
V
Ω
26
A
DYNAMIC
Symbo l
g_fs (∗)
C_iss
C_oss
C_rss
P ar am et e r
Forward
Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
Test Conditions
V_DS > I_{D(o n)} x R_{DS(on )ma x}
I_D = 13 A
Min.
15
Typ.
Max.
Unit
S
V_DS = 25 V f = 1 MHz V_GS = 0
13600 17700 pF
1130 1470 pF
270 350
pF
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