STD9N10-1 Datasheet, PDF (2/12 Pages) STMicroelectronics – N-CHANNEL 100V - 0.23 ohm - 9A DPAK/IPAK POWER MOS TRANSISTOR

STD9N10/STD9N10-1
Table 3. Absolute Maximum Ratings
Symbol
Parameter
V_DS
Drain-source Voltage (V_GS = 0)
V_DGR
Drain- gate Voltage (R_GS = 20 kΩ)
V_GS
Gate-source Voltage
I_D
Drain Current (cont.) at T_C = 25 °C
I_D
Drain Current (cont.) at T_C = 100 °C
I_DM ⁽¹⁾
Drain Current (pulsed)
P_tot
Total Dissipation at T_C = 25 °C
Derating Factor
T_stg
Storage Temperature
T_j
Max. Operating Junction Temperature
Note: 1. Pulse width limited by safe operating area.
Table 4. Thermal Data
Symbol
Parameter
R_thj-case Thermal Resistance Junction-case
Max
R_thj-amb Thermal Resistance Junction-ambient Max
T_l
Maximum Lead Temperature For Soldering Purpose
Table 5. Avalanche Characteristics
Symbol
Parameter
I_AR
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by T_j max, δ < 1%)
E_AS
Single Pulse Avalanche Energy
(starting T_j = 25 °C; I_D = I_AR; V_DD = 25 V)
E_AR
Repetitive Avalanche Energy
(pulse width limited by T_j max, δ < 1%)
I_AR
Avalanche Current, Repetitive or Not-Repetitive
(T_c = 100 °C, pulse width limited by T_j max, δ < 1%)
Value
100
100
± 20
9
6
36
45
0.3
-65 to 175
175
Value
3.33
100
275
Max Value
9
30
7
6
Unit
V
V
V
A
A
A
W
W°/C
°C
°C
Unit
°C/W
°C/W
°C
Unit
A
mJ
mJ
A
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