STD888 Datasheet, PDF (2/6 Pages) STMicroelectronics – HIGH CURRENT, HIGH PERFORMANCE, LOW VOLTAGE PNP TRANSISTOR

STD888
THERMAL DATA
Rthj-case • Thermal Resistance Junction-Case
Max
8.33
o_C/W
ELECTRICAL CHARACTERISTICS (Tcase = 25 ^oC unless otherwise specified)
Symbol
Parameter
Test Conditions
ICBO
Collector Cut-off
Current (IE = 0)
VCB = -30 V
VCB = -30 V
Tj = 100 ^oC
IEBO
V(BR)CEO∗
V(BR)CBO
V(BR)EBO
VCE(sat)∗
Emitter Cut-off Current
(IC = 0)
Collector-Emitter
Breakdown Voltage
(IB = 0)
Collector-Base
Breakdown Voltage
(IE = 0)
Emitter-Base
Breakdown Voltage
(IC = 0)
Collector-Emitter
Saturation Voltage
VEB = -6 V
IC = -10 mA
IC = -100 µA
IE = -100 µA
IC = -500 mA
IC = -2 A
IC = -5 A
IC = -6 A
IC = -8 A
IC = -10 A
IB = -5 mA
IB = -50 mA
IB = -250 mA
IB = -250 mA
IB = -400 mA
IB = -500 mA
VBE(sat)∗ Base-Emitter
Saturation Voltage
IC = -2 A
IC = -6 A
IB = -50 mA
IB = -250 mA
hFE∗ DC Current Gain
IC = -10 mA
IC = -500 mA
IC = -5 A
IC = -5 A
Tj = 100^oC
IC = -8 A
IC = -10 A
VCE = -1 V
VCE = -1 V
VCE = -1 V
VCE = -1V
VCE = -1 V
VCE = -1 V
RESISTIVE LOAD
IC = -3 A
IB1 = - IB2 = -60 mA
td
Delay Time
VCC = -20 V
(see figure 1)
tr
RiseTime
ts
StorageTime
tf
Fall Time
∗ Pulsed: Pulse duration = 300 µs, duty cycle ≤ 1.5 %
Min. Typ.
-30
-60
-6
150 200
150 200
75 100
75 100
40
55
15
35
180
160
250
80
Max.
-10
-1
-10
-0.15
-0.25
-0.70
-0.70
-1
-1.5
-1.1
-1.4
300
220
210
300
100
Unit
nA
µA
nA
V
V
V
V
V
V
V
V
V
V
V
ns
ns
ns
ns
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