STD790A Datasheet, PDF (2/6 Pages) STMicroelectronics – MEDIUM CURRENT, HIGH PERFORMANCE, LOW VOLTAGE PNP TRANSISTOR

STD790A
THERMAL DATA
Rthj-case • Thermal Resistance Junction-Case
Max
8.33
o_C/W
ELECTRICAL CHARACTERISTICS (Tcase = 25 ^oC unless otherwise specified)
Symbol
Parameter
Test Conditions
ICBO
Collector Cut-off
Current (IE = 0)
VCB = -30 V
VCB = -30 V
Tj = 100 ^oC
IEBO
V(BR)CER∗
V(BR)CBO
V(BR)EBO
VCE(sat)∗
Emitter Cut-off Current
(IC = 0)
Collector-Emitter
Breakdown Voltage
(RBE = 47Ω)
Collector-Base
Breakdown Voltage
(IE = 0)
Emitter-Base
Breakdown Voltage
(IC = 0)
Collector-Emitter
Saturation Voltage
VEB = -4 V
IC = -10 mA
IC = -100 µA
IE = -100 µA
IC = -0.5A
IC = -1A
IC = -2A
IC = -3A
IC = -3A
IB = -5mA
IB = -10mA
IB = -20mA
IB = -30mA
IB = -30mA Tj = 100 ^oC
VBE(sat)∗ Base-Emitter
Saturation Voltage
IC = -1 A
IB = -10 mA
VBE(on) Base-Emitter Turn-On IC = -1 A
Voltage
VCE = -2 V
hFE∗ DC Current Gain
IC = -10 mA
IC = -500 mA
IC = -1 A
IC = -2 A
IC = -3 A
VCE = -2 V
VCE = -2 V
VCE = -2 V
VCE = -1 V
VCE = -1V
fT
Transition Frequency IC = -50 mA VCE = -5V f = 50MHz
RESISTIVE LOAD
td
Delay Time
tr
RiseTime
IC = -3 A
IB1 = - IB2 = -60 mA
VCC = -20 V
(see figure 1)
ts
StorageTime
tf
Fall Time
∗ Pulsed: Pulse duration = 300 µs, duty cycle ≤ 1.5 %
Min.
-60
-60
-5
100
100
100
100
90
100
Typ.
-0.8
-0.8
200
200
160
130
180
160
250
80
Max.
-0.1
-10
-1
-0.15
-0.3
-0.5
-0.7
-0.9
-1.0
-1
300
300
220
210
300
100
Unit
µA
µA
µA
V
V
V
V
V
V
V
V
V
V
MHz
ns
ns
ns
ns
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