STD6NK50ZT4 Datasheet, PDF (2/12 Pages) STMicroelectronics – N-CHANNEL 500V - 0.93ohm - 5.6A TO-220/TO-220FP/DPAK

STP6NK50Z - STF6NK50Z - STD6NK50Z
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
V_DS
Drain-source Voltage (V_GS = 0)
V_DGR
Drain-gate Voltage (R_GS = 20 kΩ)
V_GS
Gate- source Voltage
I_D
Drain Current (continuous) at T_C = 25°C
I_D
Drain Current (continuous) at T_C = 100°C
I_DM ( ) Drain Current (pulsed)
P_TOT
Total Dissipation at T_C = 25°C
Derating Factor
V_ESD(G-S) Gate source ESD(HBM-C=100pF, R=1.5KΩ)
dv/dt (1) Peak Diode Recovery voltage slope
V_ISO
Insulation Withstand Voltage (DC)
T_j
Operating Junction Temperature
T_stg
Storage Temperature
( ) Pulse width limited by safe operating area
(1) ISD ≤ 5.6A, di/dt ≤ 200 A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX.
(*) Limited only by maximum temperature allowed
THERMAL DATA
Rthj-case
Rthj-amb
T_l
Thermal Resistance Junction-case Max
Thermal Resistance Junction-ambient Max
Maximum Lead Temperature For Soldering Purpose
AVALANCHE CHARACTERISTICS
Symbol
Parameter
I_AR
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by T_j max)
E_AS
Single Pulse Avalanche Energy
(starting T_j = 25 °C, I_D = I_AR, V_DD = 50 V)
Value
STP6NK50Z
STD6NK50Z
STF6NK50Z
500
500
± 30
5.6
5.6 (*)
3.5
3.5 (*)
22.4
22.4 (*)
90
25
0.72
0.2
3000
4.5
-
2500
-55 to 150
TO-220
DPAK
1.38
62.5
300
TO-220FP
5
Max Value
5.6
180
Unit
V
V
V
A
A
A
W
W/°C
V
V/ns
V
°C
°C/W
°C/W
°C
Unit
A
mJ
GATE-SOURCE ZENER DIODE
Symbol
Parameter
Test Conditions
Min.
BV_GSO Gate-Source Breakdown Igs=± 1mA (Open Drain)
30
Voltage
Typ.
Max.
Unit
V
PROTECTION FEATURES OF GATE-TO-SOURCE ZENER DIODES
The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s
ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be
applied from gate to source. In this respect the Zener voltage is appropriate to achieve an efficient and
cost-effective intervention to protect the device’s integrity. These integrated Zener diodes thus avoid the
usage of external components.
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