STD50NH02L Datasheet, PDF (2/12 Pages) STMicroelectronics – N-CHANNEL 24V - 0.0085 ohm - 50A DPAK/IPAK STripFET™ III POWER MOSFET

STD50NH02L
THERMAL DATA
Rthj-case Thermal Resistance Junction-case
Max
2.5
Rthj-amb Thermal Resistance Junction-ambient
Max
100
T_l
Maximum Lead Temperature For Soldering Purpose
275
°C/W
°C/W
°C
ELECTRICAL CHARACTERISTICS (T_CASE = 25 °C UNLESS OTHERWISE SPECIFIED)
OFF
Symbol
Parameter
Test Conditions
Min. Typ. Max. Unit
V_(BR)DSS Drain-source
I_D = 25 mA, V_GS = 0
24
V
Breakdown Voltage
I_DSS
Zero Gate Voltage
Drain Current (V_GS = 0)
V_DS = 20 V
V_DS = 20 V T_C = 125°C
1
µA
10
µA
I_GSS
Gate-body Leakage
Current (V_DS = 0)
V_GS = ± 20V
±100
nA
ON ⁽⁴⁾
Symbol
V_GS(th)
R_DS(on)
Parameter
Gate Threshold Voltage
Static Drain-source On
Resistance
Test Conditions
V_DS = V_GS
I_D = 250 µA
V_GS = 10 V
V_GS = 5 V
I_D = 25 A
I_D = 12.5 A
Min.
1
Typ. Max.
1.8
0.0085 0.0105
0.012 0.020
Unit
V
Ω
Ω
DYNAMIC
Symbol
g_fs ⁽⁴⁾
C_iss
C_oss
C_rss
R_G
Parameter
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
Gate Input Resistance
Test Conditions
V_DS = 15 V
I_D = 25 A
V_DS = 16V f = 1 MHz V_GS = 0
Min.
f = 1 MHz Gate DC Bias = 0
Test Signal Level = 20 mV
Open Drain
Typ.
27
1400
400
55
1
Max.
Unit
S
pF
pF
pF
Ω
2/12