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STD3NM50 Datasheet, PDF (2/10 Pages) STMicroelectronics – N-CHANNEL 500V - 2.5ohm - 3A DPAK/IPAK Zener-Protected MDmesh™Power MOSFET
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STD3NM50/STD3NM50-1
THERMAL DATA
Rthj-case Thermal Resistance Junction-case Max
2.73
Rthj-amb Thermal Resistance Junction-ambient Max
62.5
Tl
Maximum Lead Temperature For Soldering Purpose
300
AVALANCHE CHARACTERISTICS
Symbol
Parameter
IAR
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by Tj max)
EAS
Single Pulse Avalanche Energy
(starting Tj = 25 °C, ID = IAR, VDD = 50 V)
Max Value
1
130
ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED)
OFF
Symbol
Parameter
Test Conditions
Min. Typ. Max.
V(BR)DSS Drain-source
ID = 1 mA, VGS = 0
500
Breakdown Voltage
IDSS
Zero Gate Voltage
VDS = Max Rating
1
Drain Current (VGS = 0)
VDS = Max Rating, TC = 125 °C
10
IGSS
Gate-body Leakage
VGS = ± 20V
±5
Current (VDS = 0)
°C/W
°C/W
°C
Unit
A
mJ
Unit
V
µA
µA
µA
ON (1)
Symbol
VGS(th)
RDS(on)
Parameter
Gate Threshold Voltage
Static Drain-source On
Resistance
Test Conditions
VDS = VGS, ID = 250µA
VGS = 10V, ID = 1.5A
Min. Typ. Max. Unit
3
4
5
V
2.5
3
Ω
DYNAMIC
Symbol
Parameter
Test Conditions
gfs (1)
Forward Transconductance
VDS > ID(on) x RDS(on)max,
ID = 3 A
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
VDS = 25V, f = 1 MHz, VGS = 0
RG
Gate Input Resistance
f=1 MHz Gate DC Bias = 0
Test Signal Level = 20mV
Open Drain
Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
Min.
Typ.
0.7
140
40
4
4
Max.
Unit
S
pF
pF
pF
Ω
2/10
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