STD3N25 Datasheet, PDF (2/10 Pages) STMicroelectronics – N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR

STD3N25
THERMAL DATA
R_thj-case
R_{thj- amb}
Rt hc- sin k
Tl
Thermal Resistance Junction-case
Thermal Resistance Junction-ambient
Thermal Resistance Case-sink
Maximum Lead Temperature For Soldering Purpose
Max
Max
Typ
2.78
100
1.5
275
o_{C/ W}
o_{C/ W}
o_{C/ W}
o_C
AVALANCHE CHARACTERISTICS
Symb ol
IA R
E_AS
EAR
I_{A R}
Pa ra met er
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by T_j max, δ < 1%)
Single Pulse Avalanche Energy
(st arting T_j = 25 ^oC, I_D = I_AR, V_{D D} = 50 V)
Repetitive Avalanche Energy
(pulse width limited by Tj max, δ < 1%)
Avalanche Current, Repetitive or Not-Repetitive
(T_c = 100 ^oC, pulse width limited by T_j max, δ < 1%)
Max Value
3
20
5
1.9
Unit
A
mJ
mJ
A
ELECTRICAL CHARACTERISTICS (T_case = 25 ^oC unless otherwise specified)
OFF
Symb ol
Parameter
Test Conditions
V_(BR)DSS Drain-source
Breakdown Voltage
I_D = 250 µA V_{G S} = 0
I_DSS
Zero Gate Voltage
V_DS = Max Rating
Drain Current (VGS = 0) VDS = Max Rating x 0.8 Tc = 125 ^oC
I_{G SS}
Gate-body Leakage
Current (V_{D S} = 0)
V_GS = ± 20 V
Min.
250
Typ.
Max.
Unit
V
250
µA
1000 µA
± 100 nA
ON (∗)
Symb ol
V_{G S(th)}
RDS(on)
ID(on)
Parameter
Test Conditions
Gate Threshold Voltage V_DS = V_GS I_D = 250 µA
Static Drain-source On VGS = 10V ID = 1.5 A
R esist anc e
VGS = 10V ID = 1.5 A Tc = 100^oC
On St ate Drain Current VDS > ID( on) x RD S(on) max
VGS = 10 V
Min.
2
3
Typ.
3
1
Max.
4
2
4
Unit
V
Ω
Ω
A
DYNAMIC
Symb ol
g_fs (∗)
Ciss
Coss
C_rss
Parameter
Forward
Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
Test Conditions
V_DS > I_{D( on)} x R_{D S(on) max} I_D = 1. 5 A
Min.
1
Typ.
1.8
Max.
Unit
S
VDS = 25 V f = 1 MHz VG S = 0
370 500
pF
60
100
pF
10
20
pF
2/10