STD30NF06L Datasheet, PDF (2/10 Pages) STMicroelectronics – N-CHANNEL 60V - 0.022ohm - 35A DPAK/IPAK STripFET™ POWER MOSFET

STD30NF06L
THERMAL DATA
Rthj-case Thermal Resistance Junction-case Max
2.14
Rthj-amb Thermal Resistance Junction-ambient Max
100
T_l
Maximum Lead Temperature For Soldering Purpose
275
°C/W
°C/W
°C
AVALANCHE CHARACTERISTICS
Symbol
Parameter
I_AR
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by T_j max)
E_AS
Single Pulse Avalanche Energy
(starting T_j = 25 °C, I_D = I_AR, V_DD = 50 V)
Max Value
35
150
Unit
A
mJ
ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED)
OFF
Symbol
Parameter
Test Conditions
Min. Typ. Max. Unit
V_(BR)DSS Drain-source
I_D = 250 µA, V_GS = 0
60
V
Breakdown Voltage
I_DSS
Zero Gate Voltage
Drain Current (V_GS = 0)
V_DS = Max Rating
V_DS = Max Rating, T_C = 125 °C
1
µA
10
µA
I_GSS
Gate-body Leakage
Current (V_DS = 0)
V_GS = ± 20 V
±100
nA
ON (1)
Symbol
V_GS(th)
R_DS(on)
Parameter
Gate Threshold Voltage
Static Drain-source On
Resistance
Test Conditions
V_DS = V_GS, I_D = 250 µA
V_GS = 5 V, I_D = 18 A
V_GS = 10 V, I_D = 18 A
Min.
1
Typ.
1.7
0.025
0.022
Max.
2.5
0.03
0.028
Unit
V
Ω
Ω
DYNAMIC
Symbol
g_fs (1)
C_iss
C_oss
C_rss
Parameter
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
Test Conditions
V_DS > =15 V _, I_D =15 A
V_DS = 25 V, f = 1 MHz, V_GS = 0
Min.
Typ.
25
1600
215
60
Max.
Unit
S
pF
pF
pF
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