STD2NK60Z Datasheet, PDF (2/16 Pages) STMicroelectronics – Zener-Protected SuperMESH MOSFET

STQ2NK60ZR-AP - STP2NK60Z - STF2NK60Z - STD2NK60Z-1
Table 3: Absolute Maximum ratings
Symbol
Parameter
V_DS
Drain-source Voltage (V_GS = 0)
V_DGR
Drain-gate Voltage (R_GS = 20 kΩ)
V_GS
Gate- source Voltage
I_D
Drain Current (continuous) at T_C = 25°C
I_D
Drain Current (continuous) at T_C = 100°C
I_DM ( ) Drain Current (pulsed)
P_TOT
Total Dissipation at T_C = 25°C
Derating Factor
V_ESD(G-S) Gate source ESD (HBM-C= 100pF, R=1.5kΩ)
V_ISO
Insulation Withstand Voltage (DC)
dv/dt (1) Peak Diode Recovery voltage slope
T_j
Operating Junction Temperature
T_stg
Storage Temperature
( ) Pulse width limited by safe operating area
(1) I_SD ≤ 1.4A, di/dt ≤ 200A/µs, V_DD ≤ V_(BR)DSS, T_j ≤ T_JMAX.
(*) Limited only by maximum temperature allowed
Table 4: Thermal Data
Rthj-case
Rthj-amb
Rthj-lead
T_l
Thermal Resistance Junction-case Max
Thermal Resistance Junction-ambient Max
Thermal Resistance Junction-lead Max
Maximum Lead Temperature For Soldering
Purpose
TO-220 /
IPAK
1.4
0.77
5.6
45
0.36
Value
TO-92
600
600
± 30
0.4
0.25
1.6
3
0.025
1500
4.5
-55 to 150
Unit
TO-220FP
1.4 (*)
0.77 (*)
5.6 (*)
20
0.16
2500
V
V
V
A
A
A
W
W/°C
V
V
V/ns
°C
TO-220/IPAK TO-220FP
2.77
6.25
100
100
--
--
300
TO-92
--
120
40
260
Unit
°C/W
°C/W
°C/W
°C
Table 5: Avalanche Characteristics
Symbol
Parameter
Max Value
Unit
I_AR
Avalanche Current, Repetitive or Not-Repetitive
1.4
A
(pulse width limited by T_j max)
E_AS
Single Pulse Avalanche Energy
(starting T_j = 25 °C, I_D = I_AR, V_DD = 50 V)
90
mJ
Table 6: Gate-Source Zener Diode
Symbol
Parameter
Test Conditions
BV_GSO
Gate source
I_gs= ± 1 mA (Open Drain)
Breakdown Voltage
Min.
30
Typ.
Max.
Unit
V
PROTECTION FEATURES OF GATE-TO-SOURCE ZENER DIODES
The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s
ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be
applied from gate to source. In this respect the Zener voltage is appropriate to achieve an efficient and
cost-effective intervention to protect the device’s integrity. These integrated Zener diodes thus avoid the
usage of external components.
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