STD2NC45-1 Datasheet, PDF (2/11 Pages) STMicroelectronics – N-CHANNEL 450V - 4.1ohm - 1.5 A IPAK / TO-92 SuperMESH™Power MOSFET

STD2NC45-1, STQ1NC45
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
V_DS
Drain-source Voltage (V_GS = 0)
V_DGR
Drain-gate Voltage (R_GS = 20 kΩ)
V_GS
Gate- source Voltage
I_D
Drain Current (continuos) at T_C = 25°C
I_D
Drain Current (continuos) at T_C = 100°C
I_DM ( ) Drain Current (pulsed)
P_TOT
Total Dissipation at T_C = 25°C
Derating Factor
dv/dt (1) Peak Diode Recovery voltage slope
T_j
Operating Junction Temperature
T_stg
Storage Temperature
( ) Pulse width limited by safe operating area
(1) I_SD ≤0.5A, di/dt ≤100A/µs, V_DD ≤ V_(BR)DSS, T_j ≤ T_JMAX.
THERMAL DATA
Rthj-case
Rthj-amb
Rthj-lead
T_l
Thermal Resistance Junction-case Max
Thermal Resistance Junction-ambient Max
Thermal Resistance Junction-lead Max
Maximum Lead Temperature For Soldering
Purpose
AVALANCHE CHARACTERISTICS
Symbol
Parameter
I_AR
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by T_j max)
E_AS
Single Pulse Avalanche Energy
(starting T_j = 25 °C, I_D = I_AR, V_DD = 50 V)
Value
STD2NC45-1
STQ1NC45
450
450
± 30
1.5
0.5
0.95
0.315
6
2
30
3.1
0.24
0.025
3
-65 to 150
-65 to 150
Unit
V
V
V
A
A
A
W
W/°C
V/ns
°C
°C
IPAK
4.1
100
275
TO-92
120
40
260
°C/W
°C/W
°C/W
°C
Max Value
Unit
IPAK
TO-92
1.5
A
25
mJ
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