STD1NK60 Datasheet, PDF (2/13 Pages) STMicroelectronics – N-CHANNEL 600V - 8 - 1A DPAK / IPAK / TO-92 SuperMESH Power MOSFET

STD1NK60 - STD1NK60-1 - STQ1HNK60R
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
V_DS
Drain-source Voltage (V_GS = 0)
V_DGR
Drain-gate Voltage (R_GS = 20 kΩ)
V_GS
Gate- source Voltage
I_D
Drain Current (continuous) at T_C = 25°C
I_D
Drain Current (continuous) at T_C = 100°C
I_DM ( ) Drain Current (pulsed)
P_TOT
Total Dissipation at T_C = 25°C
Derating Factor
dv/dt (1) Peak Diode Recovery voltage slope
T_j
Operating Junction Temperature
T_stg
Storage Temperature
( ) Pulse width limited by safe operating area
(1) ISD ≤1.0A, di/dt ≤100A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX.
THERMAL DATA
Rthj-case
Rthj-amb
Rthj-lead
T_l
Thermal Resistance Junction-case Max
Thermal Resistance Junction-ambient Max
Thermal Resistance Junction-lead Max
Maximum Lead Temperature For Soldering
Purpose
Value
STD1NK60
STD1NK60-1
STQ1HNK60R
600
600
± 30
1.0
0.4
0.63
0.25
4
1.6
30
3
0.24
0.025
3
-55 to 150
Unit
V
V
V
A
A
A
W
W/°C
V/ns
°C
DPAK / IPAK
4.16
100
275
TO-92
120
40
260
°C/W
°C/W
°C/W
°C
AVALANCHE CHARACTERISTICS
Symbol
Parameter
I_AR
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by T_j max)
E_AS
Single Pulse Avalanche Energy
(starting T_j = 25 °C, I_D = I_AR, V_DD = 50 V)
Max Value
DPAK / IPAK
1
TO-92
25
Unit
A
mJ
2/13