STD1805 Datasheet, PDF (2/8 Pages) STMicroelectronics – LOW VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR

STD1805
THERMAL DATA
Rthj-case Thermal Resistance Junction-case
Max
8.33
o_C/W
ELECTRICAL CHARACTERISTICS (Tcase = 25 ^oC unless otherwise specified)
Symbol
Parameter
Test Conditions
ICBO
IEBO
V(BR)CBO
V(BR)CEO∗
V(BR)EBO
VCE(sat)∗
Collector Cut-off
Current (IE = 0)
Emitter Cut-off Current
(IC = 0)
Collector-Base
Breakdown Voltage
(IE = 0)
Collector-Emitter
Breakdown Voltage
(IB = 0)
Emitter-Base
Breakdown Voltage
(IC = 0)
Collector-Emitter
Saturation Voltage
VCB = 40 V
VEB = 4 V
IC = 100 µA
IC = 1 mA
IE = 100 µA
IC = 100 mA
IC = 2 A
IC = 3 A
IC = 5 A
IB = 5 mA
IB = 50 mA
IB = 150 mA
IB = 200 mA
VBE(sat)∗ Base-Emitter
Saturation Voltage
IC = 2 A
IB = 100 mA
hFE∗ DC Current Gain
IC = 100 mA
IC = 5 A
IC = 10 A
VCE = 2 V
VCE = 2 V
VCE = 2 V
fT
Transition frequency VCE = 10 V
IC = 50 mA
CCBO
Collector-Base
Capacitance
VCB = 10 V
f = 1 MHz
RESISTIVE LOAD
tON
Turn- on Time
ts
Storage Time
tf
Fall Time
IC = 1 A
IB1 = - IB2 = 0.1 A
* Pulsed: Pulse duration = 300µs, duty cycle = 1.5 %
VCC = 30 V
Min. Typ.
150
60
7
150
200
0.9
200
85
20
150
50
50
1.35
120
Max.
0.1
0.1
50
300
400
600
1.2
400
Unit
µA
µA
V
V
V
mV
mV
mV
mV
V
MHz
pF
ns
µs
ns
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