STD1802 Datasheet, PDF (2/7 Pages) STMicroelectronics – LOW VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR

STD1802
Table 3: THERMAL DATA
Rthj-case Thermal Resistance Junction-case
Max
8.33
o_C/W
Table 4: ELECTRICAL CHARACTERISTICS (Tcase = 25 ^oC unless otherwise specified)
Symbol
Parameter
Test Conditions
ICBO
Collector Cut-off
Current (IE = 0)
IEBO
Emitter Cut-off Current
(IC = 0)
V(BR)CBO Collector-Base
Breakdown Voltage
(IE = 0)
V(BR)CEO∗ Collector-Emitter
Breakdown Voltage
(IB = 0)
V(BR)EBO Emitter-Base
Breakdown Voltage
(IC = 0)
VCE(sat)∗ Collector-Emitter
Saturation Voltage
VCB = 40 V
VEB = 4 V
IC = 100 µA
IC = 1 mA
IE = 100 µA
IC = 2 A
IC = 3 A
IB = 100 mA
IB = 150 mA
VBE(sat)∗ Base-Emitter
Saturation Voltage
IC = 2 A
IB = 100 mA
hFE∗ DC Current Gain
IC = 100 mA
IC = 3 A
VCE = 2 V
VCE = 2 V
fT
Transition frequency VCE = 10 V
IC = 50 mA
CCBO
Collector-Base
Capacitance
VCB = 10 V
f = 1 MHz
RESISTIVE LOAD
tON Turn- on Time
IC = 1 A
ts
Storage Time
IB1 = - IB2 = 0.1 A
tf
Fall Time
∗ Pulsed: Pulse duration = 300µs, duty cycle = 1.5 %
VCC = 30 V
Min.
Typ.
Max.
0.1
0.1
80
60
6
150 300
200 400
0.9 1.2
200
400
100
150
50
50
1.35
120
Unit
µA
µA
V
V
V
mV
mV
V
MHz
pF
ns
µs
ns
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