STD12N05 Datasheet, PDF (2/10 Pages) STMicroelectronics – N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR

STD12N05/STD12N06
THERMAL DATA
R_thj-case
R_{thj- amb}
Rt hc- sin k
Tl
Thermal Resistance Junction-case
Max
Thermal Resistance Junction-ambient
Max
Thermal Resistance Case-sink
Typ
Maximum Lead Temperature For Soldering Purpose
3 .3 3
100
1. 5
275
o_C/W
o_C/W
o_C/W
o_C
AVALANCHE CHARACTERISTICS
Symb ol
IA R
E_AS
EAR
I_{A R}
Pa ra met er
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by T_j max, δ < 1%)
Single Pulse Avalanche Energy
(st arting T_j = 25 ^oC, I_D = I_AR, V_{D D} = 25 V)
Repetitive Avalanche Energy
(pulse width limited by Tj max, δ < 1%)
Avalanche Current, Repetitive or Not-Repetitive
(T_c = 100 ^oC, pulse width limited by T_j max, δ < 1%)
Max Value
12
30
7
8
Unit
A
mJ
mJ
A
ELECTRICAL CHARACTERISTICS (T_case = 25 ^oC unless otherwise specified)
OFF
Symb ol
Parameter
Test Conditions
V_(BR)DSS Drain-source
Breakdown Voltage
I_D = 250 µA
V_{G S} = 0
for STD12N05
for STD12N06
I_DSS
Zero Gate Voltage
V_DS = Max Rating
Drain Current (V_GS = 0) V_DS = Max Rating x 0.8 T_c = 125 ^oC
IG SS
Gate-body Leakage
Current (V_{D S} = 0)
VGS = ± 20 V
Min.
50
60
Typ. Max. Unit
V
V
1
µA
10
µA
± 100 nA
ON (∗)
Symb ol
VG S(th)
R_DS(on)
ID(on)
Parameter
Test Conditions
Gate Threshold Voltage VDS = VGS ID = 250 µA
Static Drain-source On V_GS = 10V I_D = 6 A
R esist anc e
On St ate Drain Current VDS > ID( on) x RD S(on) max
VGS = 10 V
Min.
2
Typ.
2.9
0.1
Max.
4
0. 15
Unit
V
Ω
12
A
DYNAMIC
Symb ol
gfs (∗)
Ciss
C_oss
C_rss
Parameter
Forward
Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
Test Conditions
VDS > ID( on) x RD S(on) max ID = 6 A
VDS = 25 V f = 1 MHz VG S = 0
Min.
3
Typ.
5
Max.
Unit
S
330 450
pF
150 250
pF
40
60
pF
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