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| STC08DE150 Datasheet, PDF (2/9 Pages) STMicroelectronics – HYBRID EMITTER SWITCHED BIPOLAR TRANSISTOR ESBT 1500 V - 8 A - 0.075 OHM | |||
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STC08DE150
Table 3: Absolute Maximum Ratings
Symbol
VCS(SS)
VBS(OS)
VSB(OS)
VGS
IC
ICM
IB
IBM
Ptot
Tstg
TJ
Parameter
Collector-Source Voltage (VBS = VGS = 0 V)
Base-Source Voltage (IC= 0, VGS = 0 V)
Source-Base Voltage (IC= 0, VGS = 0 V)
Gate-Source Voltage
Collector Current
Collector Peak Current (tp < 5ms)
Base Current
Base Peak Current (tp < 1ms)
Total Dissipation at TC = 25 oC
Storage Temperature
Max. Operating Junction Temperature
Value
Unit
1500
V
30
V
9
V
± 20
V
8
A
15
A
4
A
8
A
155
W
-65 to 125
°C
125
°C
Table 4: Thermal Data
Symbol
Parameter
Rthj-case Thermal Resistance Junction-Case
Max
Unit
0.64
oC/W
Table 5: Electrical Characteristics (Tcase = 25 oC unless otherwise specified)
Symbol
Parameter
Test Conditions
Min. Typ.
ICS(SS)
IBS(OS)
ISB(OS)
IGS(OS)
VCS(ON)
hFE
VBS(ON)
VGS(th)
Ciss
QGS(tot)
ts
tf
VCSW
Collector-Source Current
(VBS = VGS = 0 V)
Base-Source Current
(IC = 0 , VGS = 0 V)
Source-Base Current
(IC = 0 , VGS = 0 V)
Gate-Source Leakage
(VBS = 0 V)
Collector-Source ON
Voltage
DC Current Gain
Base-Source ON Voltage
Gate Threshold Voltage
Input Capacitance
Gate-Source Charge
INDUCTIVE LOAD
Storage Time
Fall Time
Maximum Collector-Source
Voltage Switched Without
Snubber
VCS(SS) = 1500 V
VBS(OS) = 30 V
VSB(OS) = 9 V
VGS = ± 20 V
VGS = 10 V IC = 8 A
IB = 1.6 A
VGS = 10 V IC = 5 A
IB = 0.5 A
IC = 8 A VCS = 1 V VGS = 10 V
IC = 5 A VCS = 1 V VGS = 10 V
VGS = 10 V IC = 8 A IB = 1.6 A
VGS = 10 V
VBS = VGS
VCS = 25 V
IC = 5 A
f = 1 MHz
IB = 0.5 A
IB = 250 mA
VGS = VCB =0
IC = 8 A
VGS = 10 V
VCS = 25 V
VGS = 10 V
VCB = 0
RG = 47 W
VClamp = 1200 V
tp = 4 ms
IC = 5 A
RG = 47 W
IB = 0.5 A
hFE = 5 A IC = 8 A
0.6
0.6
4.5 7.5
8
10
1.5
1
1.5 2.2
750
12.5
526
8.5
15
Max.
100
10
100
500
1.4
2
3
Unit
mA
mA
mA
nA
V
V
V
V
V
pF
nC
ns
ns
V
2/9
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