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| STC03DE170 Datasheet, PDF (2/9 Pages) STMicroelectronics – HYBRID EMITTER SWITCHED BIPOLAR TRANSISTOR ESBT 1700 V - 3 A - 0.55 Ohm | |||
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STC03DE170
Table 3: Absolute Maximum Ratings
Symbol
VCS(SS)
VBS(OS)
VSB(OS)
VGS
IC
ICM
IB
IBM
Ptot
Tstg
TJ
Parameter
Collector-Source Voltage (VBS = VGS = 0 V)
Base-Source Voltage (IC= 0, VGS = 0 V)
Source-Base Voltage (IC= 0, VGS = 0 V)
Gate-Source Voltage
Collector Current
Collector Peak Current (tp < 5ms)
Base Current
Base Peak Current (tp < 1ms)
Total Dissipation at TC = 25 oC
Storage Temperature
Max. Operating Junction Temperature
Value
Unit
1700
V
30
V
9
V
± 20
V
3
A
6
A
2
A
4
A
100
W
-65 to 125
°C
125
°C
Table 4: Thermal Data
Symbol
Parameter
Rthj-case Thermal Resistance Junction-Case
Max
Unit
1
oC/W
Table 5: Electrical Characteristics (Tcase = 25 oC unless otherwise specified)
Symbol
Parameter
Test Conditions
Min. Typ.
ICS(SS) Collector-Source Current
(VBS = VGS = 0 V)
IBS(OS) Base-Source Current
(IC = 0 , VGS = 0 V)
ISB(OS) Source-Base Current
(IC = 0 , VGS = 0 V)
IGS(OS) Gate-Source Leakage
VCS(ON) Collector-Source ON
Voltage
hFE DC Current Gain
VBS(ON) Base-Source ON Voltage
VGS(th) Gate Threshold Voltage
Ciss Input Capacitance
QGS(tot) Gate-Source Charge
INDUCTIVE LOAD
ts Storage Time
tf Fall Time
VCS(SS) = 1700 V
VBS(OS) = 30 V
VSB(OS) = 9 V
VGS = ± 20 V
VGS = 10 V IC = 1.8 A IB = 0.36 A
VGS = 10 V IC = 0.7 A IB = 70 mA
IC = 1.8 A VCS = 1 V VGS = 10 V
IC = 0.7 A VCS = 1 V VGS = 10 V
VGS = 10 V IC = 1.8 A IB = 0.36 A
VGS = 10 V IC = 0.7 A IB = 70 mA
VBS = VGS
IB = 250 mA
VCS = 25 V
f = 1MHZ
VGS = VCB = 0
VCS = 15 V
VGS = 10 V
VCB = 0
IC = 1.8 A
VGS = 10 V
RG = 47 W
VClamp = 1200 V
tp = 4 ms
IC = 1.8 A IB = 0.36 A
1
1
3.5
5
6
10
1
0.8
1.5 2.2
750
12.5
760
14
Max.
100
10
100
500
1.5
1.3
1.2
1
3
Unit
mA
mA
mA
nA
V
V
V
V
V
pF
nC
ns
ns
2/9
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