STBV45 Datasheet, PDF (2/8 Pages) STMicroelectronics – HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR

STBV45
Table 3: Thermal Data
Rthj-amb Thermal Resistance Junction-ambient
Max
131.6
o_C/W
Table 4: Electrical Characteristics (Tcase = 25 ^oC unless otherwise specified)
Symbol
Parameter
Test Conditions
ICEV Collector Cut-off
Current (VBE = -1.5V)
IEBO
Emitter Cut-off
Current (IC = 0)
VCEO(sus)∗ Collector-Emitter
Sustaining Voltage
(IB = 0)
VCE(sat)∗ Collector-Emitter
Saturation Voltage
VBE(sat)∗ Base-Emitter
Saturation Voltage
VCE = 700 V
VEB = 9 V
IC = 1 mA
IC = 0.2 A
IC = 0.3 A
IC = 0.4 A
IC = 0.2 A
IC = 0.3 A
IB = 40 mA
IB = 75 mA
IB = 135 mA
IB = 40 mA
IB = 75 mA
hFE∗ DC Current Gain
IC = 0.2 A
IC = 0.4 A
VCE = 5 V
VCE = 5 V
INDUCTIVE LOAD
tf
Fall Time
IC = 0.2 A
IB1 = -IB2 = 40 mA
(see figure 7)
∗ Pulsed: Pulse duration = 300µs, duty cycle = 1.5 %
Vclamp = 300 V
L = 3 mH
Min. Typ.
400
0.2
0.3
0.4
10
5
0.3
Max.
250
1
0.5
1
1.5
1
1.2
30
20
Unit
µA
mA
V
V
V
V
V
V
µs
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