STBV42 Datasheet, PDF (2/5 Pages) STMicroelectronics – HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR

STBV42
THERMAL DATA
Rthj-amb Thermal Resistance Junction-ambient
Max
120
o_C/W
ELECTRICAL CHARACTERISTICS (Tcase = 25 ^oC unless otherwise specified)
Symbol
Parameter
Test Conditions
ICEV Collector Cut-off
VCE = 700 V
Current (VBE = -1.5V) VCE = 700 V
Tj = 125^o
IEBO
Emitter Cut-off
Current (IC = 0)
VCEO(sus)∗ Collector-Emitter
Sustaining Voltage
(IB = 0)
VCE(sat)∗ Collector-Emitter
Saturation Voltage
VEB = 9 V
IC = 1 mA
L = 25mH
IC = 0.25 A
IC = 0.5 A
IC = 0.75 A
IB = 0.05 A
IB = 0.125 A
IB = 0.25 A
VBE(sat)∗ Base-Emitter
Saturation Voltage
IC = 0.25 A
IC = 0.5 A
IB = 0.05 A
IB = 0.125 A
hFE∗ DC Current Gain
IC = 0.4 A
IC = 0.8 A
VCE = 5 V
VCE = 5 V
INDUCTIVE LOAD
IC = 0.25 A
tf
Fall Time
IB1 = -IB2 = 50 mA
∗ Pulsed: Pulse duration = 300µs, duty cycle = 1.5 %
Vclamp = 300 V
L = 3 mH
Min. Typ.
400
0.2
0.3
0.4
10
5
0.3
Max.
1
5
1
0.5
1
1.5
1
1.2
30
20
Unit
mA
mA
mA
V
V
V
V
V
V
µs
Safe Operating Area
Derating Curve
2/5