STBV32 Datasheet, PDF (2/7 Pages) STMicroelectronics – HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR

STBV32
THERMAL DATA
R_{thj-ca se} Thermal Resistance Junction-case
Max
112
ELECTRICAL CHARACTERISTICS (Tcase = 25 ^oC unless otherwise specified)
o_C/W
S ymb ol
P a ra m et er
Test Conditions
ICEV Collector Cut-off
VCE = 700V
Current (V_BE = -1.5V) V_CE = 700V
T_j = 125^oC
I_EBO Emitter Cut-off
Current (I_C = 0)
VCEO(sus )∗ Collector-Emit ter
Sustaining Voltage
(I_B = 0)
VCE(sat)∗ Collector-Emitter
Saturation Voltage
V_{BE(s at)}∗ Base-Emitt er
Saturation Voltage
V_EB = 9 V
IC = 10 mA
L = 25 mH
IC = 0.5 A
IC = 1 A
I_C = 1.5 A
I_C = 0.5 A
IC = 1 A
IB = 0.1 A
IB = 0.25 A
I_B = 0.5 A
I_B = 0.1 A
IB = 0.25 A
hF E∗ DC Current Gain
IC = 0.5 A
I_C = 1 A
VCE = 2 V
V_CE = 2 V
RESISTIVE LOAD
t_r
Rise Time
t_s
Storage Time
tf
Fall Time
I_C = 1 A
I_B1 = 0.2 A
T_p= 25 µs
INDUCTIVE LO AD
t_s
Storage Time
I_C = 1 A
V_BE = -5 V
V_{c la mp} = 300 V
∗ Pulsed: Pulse duration = 300µs, duty cycle = 1.5 %.
V_CC = 125 V
I_B2 = -0.2 A
I_B1 = 0.2 A
L = 50 mH
Min.
400
8
5
Typ .
Max.
1
5
1
0.5
1
3
1.0
1.2
35
25
1.0
4.0
0.7
0.8
Unit
mA
mA
mA
V
V
V
V
V
V
µs
µs
µs
µs
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