STBR3012 Datasheet, PDF (2/8 Pages) STMicroelectronics – Ultra-low reverse losses

Characteristics
STBR3012
1
Characteristics
Table 2: Absolute ratings (limiting values at 25 °C, unless otherwise specified)
Symbol
Parameter
Value
VRSM
VRRM
IF(RMS)
IF(AV)
Non-repetitive surge reverse voltage
Repetitive peak reverse voltage
Forward rms current
Average forward current
TC = 150 °C,
δ = 0.5 square wave
1500
1200
45
30
Unit
V
V
A
A
IFSM Surge non repetitive forward current tp = 10 ms sinusoidal
300
A
Tstg
Storage temperature range
-65 to +175
°C
Tj
Maximum operating junction temperature
175
°C
Symbol
Rth(j-c)
Junction to case
Table 3: Thermal parameters
Parameter
Max. value
0.6
Unit
°C/W
Symbol
IR⁽¹⁾
VF⁽²⁾
Table 4: Static electrical characteristics
Parameter
Test conditions
Min.
Tj = 25 °C
-
Reverse leakage current
VR = VRRM
Tj = 150 °C
-
Forward voltage drop
Tj = 25 °C
-
IF = 30 A
Tj = 150 °C
-
Typ.
10
1.05
0.95
Max.
2
100
1.3
1.2
Unit
µA
V
Notes:
(1)_{Pulse test: tp = 5 ms, δ < 2%}
(2)_{Pulse test: tp = 380 µs, δ < 2%}
To evaluate the conduction losses, use the following equation:
P = 0.96 x IF(AV) + 0.008 x IF2(RMS)
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