STB80NE06-10 Datasheet, PDF (2/8 Pages) STMicroelectronics – N - CHANNEL ENHANCEMENT MODE SINGLE FEATURE SIZE POWER MOSFET

STB80NE06-10
THERMAL DATA
R_{t hj-ca se}
Rth j -a m b
R_{thc- si nk}
Tl
Thermal Resistance Junction-case
Max
Thermal Resistance Junction-ambient
Max
Thermal Resistance Case-sink
Typ
Maximum Lead Temperature For Soldering Purpose
1
62.5
0.5
300
o_{C/ W}
oC/W
o_{C/ W}
o_C
AVALANCHE CHARACTERISTICS
S ymb ol
IAR
E AS
Parameter
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by Tj max, δ < 1%)
Single Pulse Avalanche Energy
(starting T_j = 25 ^oC, I_D = I_AR , V_DD = 30 V)
Max Valu e
80
250
Unit
A
mJ
ELECTRICAL CHARACTERISTICS (Tcase = 25 ^oC unless otherwise specified)
OFF
S ymb ol
V(BR)DSS
IDSS
IGSS
P a ra m et er
Test Conditions
Dr ain- sou rc e
Breakdown Voltage
I_D = 250 µA V_GS = 0
Zero G ate Voltage
VDS = Max Rating
Drain Current (V_GS = 0) V_DS = Max Rating
o_C
T_c = 125
Gate-body Leakage
Current (V_DS = 0)
VGS = ± 20 V
Min.
60
Typ .
Max.
Unit
V
1
µA
10
µA
± 100 nA
ON (∗)
S ymb ol
V GS(th )
RDS( o n )
ID(o n)
P a ra m et er
Test Conditions
Gate Threshold
Voltage
V_DS = V_GS I_D = 250 µA
Static Drain-source On VGS = 10V ID = 40 A
Resistance
On St ate Drain Current VDS > ID(on) x RDS(on) max
V_GS = 10 V
Min.
2
Typ .
3
Max.
4
Unit
V
8.5
10
mΩ
80
A
DYNAMIC
S ymb ol
g_fs (∗)
Ciss
C_oss
C_rss
P a ra m et er
Forward
Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
Test Conditions
V_DS > I_D(on) x R_DS(on)max I_D =40 A
VDS = 25 V f = 1 MHz VGS = 0
Min.
19
Typ .
38
Max.
Unit
S
7600 10000 pF
890 1100 pF
150 200 pF
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