STB5NA80 Datasheet, PDF (2/10 Pages) STMicroelectronics – N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR

STB5NA80
THERMAL DATA
R_{t hj-ca se}
R_{t hj- amb}
R_{t hj- amb}
Tl
Thermal Resistance Junction-case
Thermal Resistance Junction-ambient
Thermal Resistance Case-sink
Maximum Lead T emperature For Soldering Purpose
Max
Max
Typ
1
62.5
0.5
300
o_C/W
o_C/W
o_C/W
o_C
AVALANCHE CHARACTERISTICS
Symb ol
IAR
E _AS
EAR
I_AR
Parameter
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by T_j max, δ < 1%)
Single Pulse Avalanche Energy
(starting T_j = 25 ^oC, I_D = I_AR, V_DD = 25 V)
Repetitive Avalanche Energy
(pulse width limited by Tj max, δ < 1%)
Avalanche Current, Repetitive or Not-Repetitive
(Tc = 100 ^oC, pulse width limited by Tj max, δ < 1%)
Max Value
4.7
110
4.5
3
Unit
A
mJ
mJ
A
ELECTRICAL CHARACTERISTICS (Tcase = 25 ^oC unless otherwise specified)
OFF
Symb ol
V(BR)DSS
IDSS
IGSS
P a ram et er
Test Conditions
Dr ain - s o ur c e
Breakdown Voltage
ID = 250 µA
VGS = 0
Zero Gate Voltage
VDS = Max Rating
Drain Current (V_GS = 0) V_DS = Max Rating x 0. 8 T_c = 125 ^oC
Gate-body Leakage
Current (V_DS = 0)
VGS = ± 30 V
Min.
800
Typ .
M a x.
250
1000
± 100
Unit
V
µA
µA
nA
ON (∗)
Symb ol
V _{GS(th )}
RDS( o n )
I_{D(o n)}
P a ram et er
Test Conditions
Gate T hreshold Voltage V_DS = V_GS I_D = 250 µA
St atic Drain-source On VGS = 10 V ID = 2. 5 A
Re s is ta nc e
V_GS = 10 V I_D = 2.5 A T_c = 100 ^oC
On State Drain Current V_DS > I_D(on) x R_DS(on)max V_GS = 10 V
Min.
2.5
4.7
Typ .
3
1.8
M a x.
3.75
2.4
4.8
Unit
V
Ω
Ω
A
DYNAMIC
Symb ol
gfs (∗)
C_iss
Coss
C_rss
P a ram et er
Forward
T r ans c on duc ta nc e
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
Test Conditions
VDS > ID(on) x RDS(on)max ID = 2.5 A
Min.
2.7
Typ .
5.2
M a x.
Unit
S
V_DS = 25 V f = 1 MHz V_GS = 0
1250 1700 pF
140 190 pF
35
50
pF
2/10