STB55NE06L Datasheet, PDF (2/5 Pages) STMicroelectronics – N - CHANNEL ENHANCEMENT MODE SINGLE FEATURE SIZE POWER MOSFET

STB55NE06L
THERMAL DATA
Rthj-case
Rthj-amb
Rthc-sink
Tl
Thermal Resistance Junction-case
Max
Thermal Resistance Junction-ambient
Max
Thermal Resistance Case-sink
Typ
Maximum Lead Temperature For Soldering Purpose
1.15
62.5
0.5
300
o_C/W
oC/W
o_C/W
o_C
AVALANCHE CHARACTERISTICS
Symbol
IAR
EAS
Parameter
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by Tj max, δ < 1%)
Single Pulse Avalanche Energy
(starting Tj = 25 ^oC, ID = IAR, VDD = 15 V)
Max Value
55
250
Unit
A
mJ
ELECTRICAL CHARACTERISTICS (Tcase = 25 ^oC unless otherwise specified)
OFF
Symbol
V(BR)DSS
IDSS
IGSS
Parameter
Test Conditions
Drain-source
Breakdown Voltage
ID = 250 µA VGS = 0
Zero Gate Voltage
VDS = Max Rating
Drain Current (VGS = 0) VDS = Max Rating
Tc =125 ^oC
Gate-body Leakage
Current (VDS = 0)
VGS = ± 15 V
Min.
60
Typ. Max.
1
10
± 100
Unit
V
µA
µA
nA
ON (∗)
Symbol
VGS(th)
RDS(on)
ID(on)
Parameter
Test Conditions
Gate Threshold
Voltage
VDS = VGS ID = 250 µA
Static Drain-source On VGS = 5 V ID = 27.5 A
Resistance
VGS = 10 V ID = 27.5 A
On State Drain Current VDS > ID(on) x RDS(on)max
VGS = 10 V
Min.
1
Typ.
1.7
Max.
2.5
Unit
V
0.022 0.028 Ω
0.019 0.022
55
A
DYNAMIC
Symbol
gfs (∗)
Ciss
C oss
Crss
Parameter
Forward
Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
Test Conditions
Min.
VDS > ID(on) x RDS(on)max ID =27.5 A 20
Typ.
30
Max.
Unit
S
VDS = 25 V f = 1 MHz VGS = 0
2800 3750 pF
375 500 pF
100 140 pF
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