STB55NE06 Datasheet, PDF (2/8 Pages) STMicroelectronics – N - CHANNEL ENHANCEMENT MODE ” SINGLE FEATURE SIZE ” POWER MOSFET

STB55NE06
THERMAL DATA
R_{t hj-ca se}
Rth j -a m b
R_{thc- si nk}
Tl
Thermal Resistance Junction-case
Max
Thermal Resistance Junction-ambient
Max
Thermal Resistance Case-sink
Typ
Maximum Lead Temperature For Soldering Purpose
1.15
62.5
0.5
300
o_{C/ W}
oC/W
o_{C/ W}
o_C
AVALANCHE CHARACTERISTICS
Symb ol
IAR
E AS
Parameter
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by Tj max, δ < 1%)
Single Pulse Avalanche Energy
(starting T_j = 25 ^oC, I_D = I_AR, V_DD = 25 V)
Max Value
55
200
Unit
A
mJ
ELECTRICAL CHARACTERISTICS (Tcase = 25 ^oC unless otherwise specified)
OFF
Symb ol
V(BR)DSS
IDSS
IGSS
P a ram et er
Test Conditions
Dr ain - s o ur c e
Breakdown Voltage
I_D = 250 µA V_GS = 0
Zero Gate Voltage
VDS = Max Rating
Drain Current (V_GS = 0) V_DS = Max Rating
T_c = 125 ^oC
Gate-body Leakage
Current (V_DS = 0)
VGS = ± 20 V
Min.
60
Typ . Max.
1
10
± 100
Unit
V
µA
µA
nA
ON (∗)
Symb ol
V _{GS(th )}
R_{DS( o n )}
I_{D(o n)}
P a ram et er
Test Conditions
Gate T hreshold Voltage V_DS = V_GS I_D = 250 µA
St atic Drain-source On V_GS = 10V I_D = 27.5 A
Re s is ta nc e
On State Drain Current V_DS > I_D(on) x R_DS(on)max
V_GS = 10 V
Min.
2
Typ .
3
0.019
M a x.
4
0. 022
Unit
V
Ω
55
A
DYNAMIC
Symb ol
gfs (∗)
Ciss
Coss
Crss
P a ram et er
Forward
T r ans c on duc ta nc e
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
Test Conditions
Min.
VDS > ID(on) x RDS(on)max ID =27.5 A 25
Typ .
35
M a x.
Unit
S
VDS = 25 V f = 1 MHz VGS = 0
3050 4000 pF
380 500 pF
100 130 pF
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