STB3NA80 Datasheet, PDF (2/10 Pages) STMicroelectronics – N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR

STB3NA80
THERMAL DATA
R_{thj -ca se}
R _{thj- amb}
R thc-sin k
T_l
Thermal Resistance Junction-case
Thermal Resistance Junction-ambient
Thermal Resistance Case-sink
Maximum Lead T emperature For Soldering Purpose
Max
Max
Typ
0 .8
62.5
0 .5
300
o_C/W
o_C/W
o_C/W
o_C
AVALANCHE CHARACTERISTICS
Sy mbo l
I_AR
EAS
E AR
I_AR
P a ram et er
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by Tj max, δ < 1%)
Single Pulse Avalanche Energy
(st arting T_j = 25 ^oC, I_D = I_AR, V_DD = 50 V)
Repetitive Avalanche Energy
(pulse width limited by T_j max, δ < 1%)
Avalanche Current, Repetitive or Not-Repetitive
(T_c = 100 ^oC, pulse width limited by T_j max, δ < 1%)
Max Value
3 .1
48
2
2
Unit
A
mJ
mJ
A
ELECTRICAL CHARACTERISTICS (T_case = 25 ^oC unless otherwise specified)
OFF
Sy mbo l
V _(BR)DSS
I_DSS
IGSS
P ar am et e r
T est Con ditio ns
Dr a in- s our c e
Breakdown Voltage
I_D = 250 µA V_GS = 0
Zero G ate Voltage
V_DS = Max Rating
Drain Current (V_GS = 0) V_DS = Max Rating x 0.8 T_c = 125 ^oC
Gate-body Leakage
Current (VDS = 0)
VGS = ± 30 V
Min.
800
Typ. Max.
250
1000
± 100
Unit
V
µA
µA
nA
ON (∗)
Sy mbo l
V_{GS( th )}
R _{DS( o n )}
I_{D(on )}
P ar am et e r
T est Con ditio ns
Gate Threshold Voltage V_DS = V_GS I_D = 250 µA
Static Drain-source On V_GS = 10V I_D = 1.5 A
Resistance
VGS = 10V ID = 1.5 A Tc = 100^oC
On State Drain Current V_DS > I_D(on) x R_DS(on)max
VGS = 10 V
Min.
2.25
3.1
T yp.
3
3.5
Max.
3.75
4 .5
9
Unit
V
Ω
Ω
A
DYNAMIC
Sy mbo l
g_fs (∗)
C_{is s}
Co ss
C_{r ss}
P ar am et e r
F or war d
T r a nsc ond uc t an c e
Input Capacitance
Output Capacitance
Reverse T ransfer
Capacitance
T est Con ditio ns
V_DS > I_D(on) x R_DS(on)max I_D = 1.5 A
Min.
1.5
T yp.
3
Max.
Unit
S
V_DS = 25 V f = 1 MHz V_GS = 0
730 950 pF
85
115
pF
20
30
pF
2/10