STB19NB20 Datasheet, PDF (2/8 Pages) STMicroelectronics – N - CHANNEL ENHANCEMENT MODE PowerMESH] MOSFET

STB19NB20
THERMAL DATA
R_thj-case
R th j -a mb
R_thc-sink
T_l
Thermal Resistance Junction-case
Max
Thermal Resistance Junction-ambient
Max
Thermal Resistance Case-sink
Typ
Maximum Lead Temperature F or Soldering Purpose
1
62.5
0.5
300
o_C/W
o_C/W
o_C/W
o_C
AVALANCHE CHARACTERISTICS
Symbo l
I_AR
EAS
P a ra met er
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by T_j max)
Single Pulse Avalanche Energy
(starting T_j = 25 ^oC, I_D = I_AR, V_DD = 50 V)
Max Value
19
580
Unit
A
mJ
ELECTRICAL CHARACTERISTICS (T_case = 25 ^oC unless otherwise specified)
OFF
Symbo l
V _{(BR)D SS}
I_DSS
I_GSS
P ar am et e r
Test Conditions
Dr ain- s our c e
Breakdown Voltage
I_D = 250 µA V_GS = 0
Zero Gate Voltage
V_DS = Max Rat ing
Drain Current (VGS = 0) VDS = Max Rat ing
Tc = 125 ^oC
Gate-body Leakage
Current (V_DS = 0)
V_GS = ± 30 V
Min.
200
Typ. Max.
1
10
± 100
Unit
V
µA
µA
nA
ON (∗)
Symbo l
V_GS(th)
R_DS(on)
I_{D(o n)}
P ar am et e r
Test Conditions
Gat e Threshold Voltage V_DS = V_GS I_D = 250 µA
Static Drain-source On V_GS = 10V I_D = 9. 5 A
Resistance
On State Drain Current V_DS > I_{D(o n)} x R_{DS(on )max}
V_GS = 10 V
Min.
3
Typ.
4
0.150
Max.
5
0.180
Unit
V
Ω
19
A
DYNAMIC
Symbo l
g_fs (∗)
C_iss
C_oss
C_rss
P ar am et e r
Forward
Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
Test Conditions
V_DS > I_{D(o n)} x R_{DS(on )ma x} I_D =9.5 A
Min.
3
Typ.
Max.
Unit
S
V_DS = 25 V f = 1 MHz V_GS = 0
1000 1350 pF
285 385
pF
45
60
pF
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