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| SGSIF464 Datasheet, PDF (2/7 Pages) STMicroelectronics – HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR | |||
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SGSF464/SGSIF464
THERMAL DATA
Rthj-ca se Thermal Resistance Junction-Case
Rthj- amb Thermal Resistance Junction-Ambient
M ax
Max
TO-218
1
ISO WATT218
2.2
30
oC/W
oC/W
ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)
Symb ol
P a ram et er
Test Conditions
ICES
ICEO
Collector Cut-off
Current (VBE = 0)
Collector Cut-off
Current (IB = 0)
VCE = 1200 V
VEC = 380 V
VEC = 600 V
IEBO Emitt er Cut-off Current
(IC = 0)
VCEO(sus )â Collect or-Emitter
Sustaining Voltage
VBE = 7 V
IC = 100 mA
VCE(sat)â Collect or-Emitter
Saturation Voltage
IC = 6 A
IB = 1.2 A
IC = 3.5 A IB = 0.5 A
VBE(s at)â Base-Emitt er
Saturation Voltage
IC = 6 A
IB = 1.2 A
IC = 3.5 A IB = 0.5 A
tON
Turn-on T ime
ts
Storage Time
tf
Fall Time
RESISTIVE LO AD
vCC = 250 v
IC = 6 A
IB1 = 1 A
IB1 = -2 A
tON
Turn-on T ime
ts
Storage Time
tf
Fall Time
RESISTIVE LO AD
vCC = 250 v
IC = 5 A
IB1 = 1 A
IB1 = -2 A
With Antisaturation Network
tON
Turn-on T ime
ts
Storage Time
tf
Fall Time
RESISTIVE LO AD
VCC = 250 V
IC = 5 A
IB1 = 1 A
VBE(off) = - 5 V
ts
Storage Time
tf
Fall Time
INDUCTIVE LOAD
IC = 5 A
hFE = 5
VCL = 450 V VBE(off) = -5 V
L = 300 µH RBB = 0.8 â¦
ts
Storage Time
INDUCTIVE LOAD
tf
Fall Time
IC = 5 A
hFE = 5
VCL = 450 V VBE(off) = -5 V
L = 300 µH RBB = 0.8 â¦
Tc = 100 oC
â Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
Min. Typ.
600
0.6
2.45
0.12
0.6
1.7
0.12
0.6
1.3
0.2
1.4
0.1
M a x.
200
200
2
1
1.5
1.5
1.5
1.5
1.2
3.5
0.4
2.8
0.2
4
0.3
Unit
µA
µA
mA
mA
V
V
V
V
V
µs
µs
µs
µs
µs
µs
µs
µs
µs
µs
µs
µs
µs
2/7
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