SGSIF344FP Datasheet, PDF (2/6 Pages) STMicroelectronics – HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR

SGSIF344FP
THERMAL DATA
R_{thj-ca se} Thermal Resistance Junction-case
Max
3.12
o_C/W
ELECTRICAL CHARACTERISTICS (T_case = 25 ^oC unless otherwise specified)
Symb ol
P a ram et er
Test Conditions
ICES
ICEO
Collector Cut-off
Current (V_BE = 0)
Collector Cut-off
Current (IB = 0)
VCE = 1200 V
VEC = 380 V
VEC = 600 V
IEBO Emitt er Cut-off Current
(I_C = 0)
V_{CEO(sus )}∗ Collect or-Emitter
Sustaining Voltage
VBE = 7 V
I_C = 100 mA
VCE(sat)∗ Collect or-Emitter
Saturation Voltage
IC = 3.5 A IB = 0.7 A
IC = 2.5 A IB = 0.35 A
V_{BE(s at)}∗ Base-Emitt er
Saturation Voltage
I_C = 3.5 A I_B = 0.7 A
IC = 2.5 A IB = 0.35 A
RESISTIVE LOAD
t_on
Turn-on T ime
ts
Storage Time
t_f
Fall Time
VCC = 250 V
I_B1 = 0.7 A
IC = 3.5 A
I_B1 = -1.4 A
RESISTIVE LOAD
t_on
Turn-on T ime
ts
Storage Time
t_f
Fall Time
VCC = 250 V
IC = 3.5 A
I_B1 = 0.7 A
I_B1 = -1.4 A
With Antisaturation Network
RESISTIVE LOAD
ton
Turn-on T ime
t_s
Storage Time
tf
Fall Time
V_CC = 250 V
IB1 = 0.7 A
I_C = 3.5 A
VBE(off) = - 5 V
INDUCTIVE LOAD
ts
Storage Time
t_f
Fall Time
IC = 3.5 A
VCLAMP = 450 V
L = 300 µH
hFE = 5
VBE(of f) = -5 V
RBB = 1.2 Ω
INDUCTIVE LOAD
IC = 3.5 A
t_s
Storage Time
V_CLAMP = 450 V
t_f
Fall Time
L = 300 µH
T_c = 100 ^oC
∗ Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
hFE = 5
V_{BE(of f)} = -5 V
RBB = 1.2 Ω
Min. Typ.
600
0.7
2.2
0.18
0.7
1.5
0.2
0.7
1
0.2
1.4
0.1
M a x.
200
200
2
1
1.5
1.5
1.5
1.5
1.2
3.5
0.4
2.8
0.2
4
0.3
Unit
µA
µA
mA
mA
V
V
V
V
V
µs
µs
µs
µs
µs
µs
µs
µs
µs
µs
µs
µs
µs
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