SGSIF344 Datasheet, PDF (2/7 Pages) STMicroelectronics – HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTORS

SGSIF344 / SGSIF444
THERMAL DATA
Rthj-ca se Thermal Resistance Junction-case
ISOWATT220 ISOWATT218 ^oC/W
Max
3 .1 2
2.5
o_C/W
ELECTRICAL CHARACTERISTICS (Tcase = 25 ^oC unless otherwise specified)
Symb ol
P a ram et er
Test Conditions
ICES
ICEO
Collector Cut-off
Current (V_BE = 0)
Collector Cut-off
Current (I_B = 0)
VCE = 1200 V
VEC = 380 V
V_EC = 600 V
IEBO Emitt er Cut-off Current
(I_C = 0)
VCEO(sus )∗ Collect or-Emitter
Sustaining Voltage
VBE = 7 V
IC = 100 mA
V_{CE(sat )}∗
VBE(s at)∗
t_ON
ts
t_f
tON
t_s
t_f
Co lle ct or- Em it t er
Saturation Voltage
Ba se-Em it t er
Saturation Voltage
Turn-on T ime
Storage Time
Fall Time
Turn-on T ime
Storage Time
Fall Time
I_C = 3.5 A I_B = 0.7 A
I_C = 2.5 A I_B = 0.35 A
IC = 3.5 A IB = 0.7 A
I_C = 2.5 A I_B = 0.35 A
RESISTIVE LO AD
vCC = 250 v
IC = 3.5 A
I_B1 = 0.7 A
I_B1 = -1.4 A
RESISTIVE LO AD
v_CC = 250 v
I_C = 3.5 A
I_B1 = 0.7 A
I_B1 = -1.4 A
With Antisaturation Network
tON
Turn-on T ime
ts
Storage Time
tf
Fall Time
RESISTIVE LO AD
VCC = 250 V
IC = 3.5 A
IB1 = 0.7 A
VBE(off) = - 5 V
t_s
Storage Time
t_f
Fall Time
INDUCTIVE LOAD
I_C = 3.5 A
h_FE = 5
VCL = 450 V VBE(off) = -5 V
L = 300 µH R_BB = 1.2 Ω
t_s
Storage Time
INDUCTIVE LOAD
tf
Fall Time
IC = 3.5 A
hFE = 5
V_CL = 450 V V_BE(off) = -5 V
L = 300 µH R_BB = 1.2 Ω
T_c = 100 ^oC
∗ Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
Min. Typ.
600
0.7
2.2
0.18
0.7
1.5
0.2
0.7
1
0.2
1.4
0.1
M a x.
200
200
2
1
1.5
1.5
1.5
1.5
1.2
3.5
0.4
2.8
0.2
4
0.3
Unit
µA
µA
mA
mA
V
V
V
V
V
µs
µs
µs
µs
µs
µs
µs
µs
µs
µs
µs
µs
µs
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