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| SGSF324 Datasheet, PDF (2/6 Pages) STMicroelectronics – HIGH VOLTAGE FASTSWITCHING NPN POWER TRANSISTOR | |||
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SGSF324
THERMAL DATA
Rthj-ca se Thermal Resistance Junction-Case
Rthj- amb Thermal Resistance Junction-Ambient
Max
Max
1.78
62.5
oC/W
oC/W
ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)
Symb ol
P a ram et er
Test Conditions
ICES
ICEO
Collector Cut-off
Current (VBE = 0)
Collector Cut-off
Current (IB = 0)
VCE = 1200 V
VEC = 380 V
VEC = 600 V
IEBO Emitt er Cut-off Current
(IC = 0)
VCEO(sus )â Collect or-Emitter
Sustaining Voltage
VBE = 7 V
IC = 100 mA
VCE(sat)â Collect or-Emitter
Saturation Voltage
IC = 1.75 A IB = 0.35 A
IC = 1.25 A IB = 0.18 A
VBE(s at)â
tON
ts
tf
Ba se-Em it t er
Saturation Voltage
Turn-on T ime
Storage Time
Fall Time
IC = 1.75 A IB = 0.35 A
IC = 1.25 A IB = 0.18 A
RESISTIVE LO AD
vCC = 250 v
IC = 1.75 A
IB1 = 0.35 A
IB1 = - 0.7 A
tON
Turn-on T ime
ts
Storage Time
tf
Fall Time
RESISTIVE LO AD
VCC = 250 v
IC = 1.75 A
IB1 = 0.35 A
IB1 = - 0.7 A
With Antisaturation Network
tON
Turn-on T ime
ts
Storage Time
tf
Fall Time
RESISTIVE LO AD
VCC = 250 V
IC = 1.75 A
IB1 = 0.35 A
VBE (of f) = - 5 V
ts
Storage Time
tf
Fall Time
INDUCTIVE LOAD
IC = 1.75 A hFE = 5
VCL = 450 V VBE(off) = -5 V
L = 300 µH RBB = 2 â¦
ts
Storage Time
INDUCTIVE LOAD
tf
Fall Time
IC = 1.75 A hFE = 5
VCL = 450 V VBE(off) = -5 V
L = 300 µH
Tc = 100 oC
RBB = 2 â¦
â Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
Min. Typ.
600
0.6
3
0.2
0.6
2
0.16
0.6
1
0.5
1.2
0.1
M a x.
200
200
1
1.5
1.5
1.5
1.5
1
4.5
0.35
2.5
0.2
3.7
0.3
Unit
µA
µA
mA
mA
V
V
V
V
V
µs
µs
µs
µs
µs
µs
µs
µs
µs
µs
µs
µs
µs
2/6
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