SD1731_04 Datasheet, PDF (2/9 Pages) STMicroelectronics – RF POWER BIPOLAR TRANSISTORS HF SSB APPLICATIONS

SD1731 (TH562)
Table 2. Absolute Maximum Ratings (T_case = 25°C)
Symbol
Parameter
V_CBO
Collector-Base Voltage
V_CEO
Collector-Emitter Voltage
V_EBO
Emitter-Base Voltage
I_C
Device Current
P_DISS
Power Dissipation (T_heatsink ≤ 25°C)
T_J
Junction Temperature
T_STG
Storage Temperature
Value
Unit
110
V
55
V
4.0
V
20
A
233
W
+200
°C
– 65 to +150
°C
Table 3. Thermal Data
Symbol
Parameter
Value
Unit
R_TH(j-c)
) _RTH(c-s)
Junction-Case Thermal Resistance
Case-Heatsink Thermal Resistance
duct(s _{ELECTRICAL SPECIFICATIONS}
Pro Table 4. Static (T_case = 25°C)
te _Symbol
Test Conditions
sole ^BVCBO
b _BVCEO
- ^O BV_EBO
t(s) ^ICEO
c ^ICES
u _hFE
I_C = 200 mA; I_E = 0 mA
I_C = 200 mA; I_B = 0 mA
I_E = 20 mA; I_C = 0 mA
V_CE = 30 V; I_E = 0 mA
V_CE = 55 V; I_E = 0 mA
V_CE = 6 V; I_C = 10 A
Prod ^{Table 5. Dynamic (T}heatsink ^{= 25°C)}
te _Symbol
Test Conditions
ole _POUT
Obs^GP(1)
f = 30 MHz; V_CE = 50 V; I_CQ = 150 mA
P_OUT = 220 W PEP; V_CE = 50 V; I_CQ = 150 mA
0.55
°C/W
0.2
°C/W
Min.
110
55
4.0
—
—
15
Value
Typ.
—
—
—
—
—
—
Max.
—
—
—
5
10
80
Unit
V
V
V
mA
mA
—
Min.
220
13
Value
Typ.
—
—
Max.
—
—
Unit
W
dB
IMD⁽¹⁾
P_OUT = 220 W PEP; V_CE = 50 V; I_CQ = 150 mA
—
—
–30
dBc
η_c(1)
P_OUT = 220 W PEP; V_CE = 50 V; I_CQ = 150 mA
40
—
—
%
C_OB
f = 1 MHz; V_CB = 50 V
—
330
—
pF
Note: 1. f₁ = 30.00 MHz, f₂ = 30.001 MHz
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