SD1727_04 Datasheet, PDF (2/9 Pages) Diodes Incorporated – RF POWER BIPOLAR TRANSISTORS HF SSB APPLICATIONS

SD1727 (THX15)
Table 2. Absolute Maximum Ratings (T_case = 25°C)
Symbol
Parameter
V_CBO
Collector-Base Voltage
V_CEO
Collector-Emitter Voltage
V_EBO
Emitter-Base Voltage
I_C
Device Current
P_DISS
Power Dissipation
T_J
Junction Temperature
T_STG
Storage Temperature
Value
Unit
110
V
55
V
4.0
V
10
A
233
W
+200
°C
– 65 to +150
°C
Table 3. Thermal Data
Symbol
Parameter
Value
Unit
R_TH(j-c)
Junction-Case Thermal Resistance
ct(s) _{ELECTRICAL SPECIFICATIONS (Tcase = 25°C)}
rodu ^{Table 4. Static}
P _Symbol
Test Conditions
lete BVCBO
so ^BVCES
b _BVCEO
- ^O BV_EBO
t(s) ^ICEO
c ^ICES
u _hFE
I_C = 100 mA; I_E = 0 mA
I_C = 100 mA; V_BE = 0 V
I_C = 100 mA; I_B = 0 mA
I_E = 10 mA; I_C = 0 mA
V_CE = 30 V; I_E = 0 mA
V_CE = 60 V; I_E = 0 mA
V_CE = 6 V; I_C = 1.4 A
Prod ^{Table 5. Dynamic}
te Symbol
Test Conditions
ole P_OUT
Obs^{GP (1)}
f = 30 MHz; V_CE = 50 V; I_CQ = 100 mA
P_OUT = 150 W PEP; V_CE = 50 V; I_CQ = 100 mA
0.75
°C/W
Min.
110
110
55
4.0
—
—
18
Value
Typ.
—
—
—
—
—
—
—
Max.
—
—
—
—
5
5
43.5
Unit
V
V
V
V
mA
mA
—
Min.
150
14
Value
Typ.
—
—
Max.
—
—
Unit
W
dB
IMD ⁽¹⁾
P_OUT = 150 W PEP; V_CE = 50 V; I_CQ = 100 mA
—
—
–30
dBc
η_c(1)
P_OUT = 150 W PEP; V_CE = 50 V; I_CQ = 100 mA
37
—
—
%
C_OB
f = 1 MHz; V_CB = 50 V
Note: The SD1727 is also usable in Class A at 40 V. Typical performance is:
P_OUT = 30 W PEP, G_P = 14 dB, IMD = – 40dBc
Note: 1. f₁ = 30.00 MHz; f₂ = 30.001 MHz
—
—
220
pF
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