SD1274-01 Datasheet, PDF (2/7 Pages) STMicroelectronics – RF POWER BIPOLAR TRANSISTORS VHF MOBILE APPLICATIONS

SD1274-01
Table 2. Absolute Maximum Ratings (T_case = 25°C)
Symbol
Parameter
V_CBO
Collector-Base Voltage
V_CEO
Collector-Emitter Voltage
V_CES
Collector-Emitter Voltage
V_EBO
Emitter-Base Voltage
I_C
Device Current
P_DISS
Power Dissipation
T_J
Junction Temperature
T_STG
Storage Temperature
Table 3. Thermal Data
Symbol
Parameter
R_TH(j-c)
Junction-Case Thermal Resistance
ELECTRICAL SPECIFICATIONS (T_CASE = 25°C)
Table 4. Static
Symbol
Test Conditions
BV_CES
BV_CEO
BV_EBO
I_CBO
h_FE
I_C = 15 mA; V_BE = 0 mA
I_C = 50 mA; I_B = 0 mA
I_E = 5 mA; I_C = 0 mA
V_CB = 15 V; I_E = 0 mA
V_CE = 5 V; I_C = 250 mA
Table 5. Dynamic
Symbol
Test Conditions
P_OUT
G_P
C_OB
f = 160 MHz; P_IN = 3.0 W; V_CE = 13.6 V
f = 160 MHz; P_IN = 3.0 W; V_CE = 13.6 V
f = 1 MHz; V_CB = 15 V
Value
36
16
36
4.0
8.0
70
+200
– 65 to +150
Value
1.2
Unit
V
V
V
V
A
W
°C
°C
Unit
°C/W
Min.
36
16
4.0
—
20
Value
Typ.
—
—
—
—
—
Max.
—
—
—
5
—
Unit
V
V
V
mA
—
Min.
30
10
—
Value
Typ.
—
—
95
Max.
—
—
—
Unit
W
dB
pF
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