PZT3906 Datasheet, PDF (2/4 Pages) NXP Semiconductors – PNP switching transistor

PZT3906
THERMAL DATA
Rthj-amb • Thermal Resistance Junction-Ambient
• Device mounted on a PCB of 1 cm²
Max
125
o_C/W
ELECTRICAL CHARACTERISTICS (Tcase = 25 ^oC unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
ICEX Collector Cut-off
Current (VBE = 3 V)
VCE = -30 V
IBEX Collector Cut-off
Current (VBE = 3 V)
VCE = -30 V
V(BR)CEO∗ Collector-Emitter
IC = -1 mA
-40
Breakdown Voltage
(IB = 0)
V(BR)CBO Collector-Base
IC = -10 µA
-60
Breakdown Voltage
(IE = 0)
V(BR)EBO Emitter-Base
IE = -10 µA
-6
Breakdown Voltage
(IC = 0)
VCE(sat)∗ Collector-Emitter
Saturation Voltage
IC = -10 mA
IC = -50 mA
IB = -1 mA
IB = -5 mA
VBE(sat)∗ Base-Emitter
Saturation Voltage
IC = -10 mA
IC = -50 mA
IB = -1 mA
IB = -5 mA
-0.65
hFE∗ DC Current Gain
IC = -0.1 mA VCE = -1 V
60
IC = -1 mA
VCE = -1 V
80
IC = -10 mA
VCE = -1 V
100
IC = -50 mA
VCE = -1 V
60
IC = -100 mA VCE = -1 V
30
fT
Transition Frequency IC = -10mA VCE = -20 V f = 100MHz 250
NF Noise Figure
CCBO
Collector-Base
Capacitance
VCE = -5 V IC = -0.1 mA f = 10 Hz
to 15.7 KHz RG = 1 KΩ
IE = 0 VCB = -5 V f = 100 KHz
CEBO
Emitter-Base
Capacitance
IC = 0 VEB = -0.5 V f = 100 KHz
td
Delay Time
tr
Rise Time
IC = -10 mA
VCC = -3V
IB = -1 mA
ts
Storage Time
tf
Fall Time
IC = -10 mA
VCC = -3V
∗ Pulsed: Pulse duration = 300 µs, duty cycle ≤ 2 %
IB1 = -IB2 = -1 mA
Typ.
4
6
25
Max.
-50
-50
-0.25
-0.4
-0.85
-0.95
300
35
35
225
72
Unit
nA
nA
V
V
V
V
V
V
V
MHz
dB
pF
pF
ns
ns
ns
ns
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