PZT3904 Datasheet, PDF (2/4 Pages) NXP Semiconductors – NPN switching transistor

PZT3904
THERMAL DATA
Rthj-amb • Thermal Resistance Junction-Ambient
• Device mounted on a PCB area of 1 cm²
Max
125
o_C/W
ELECTRICAL CHARACTERISTICS (Tcase = 25 ^oC unless otherwise specified)
Symbol
Parameter
Test Conditions
ICEX Collector Cut-off
Current (VBE = -3 V)
IBEX Base Cut-off Current
(VBE = -3 V)
V(BR)CEO∗ Collector-Emitter
Breakdown Voltage
(IB = 0)
V(BR)CBO Collector-Base
Breakdown Voltage
(IE = 0)
V(BR)EBO
Emitter-Base
Breakdown Voltage
(IC = 0)
VCE(sat)∗ Collector-Emitter
Saturation Voltage
VCE = 30 V
VCE = 30 V
IC = 1 mA
IC = 10 µA
IE = 10 µA
IC = 10 mA
IC = 50 mA
IB = 1 mA
IB = 5 mA
VBE(sat)∗ Base-Emitter
Saturation Voltage
IC = 10 mA
IC = 50 mA
IB = 1 mA
IB = 5 mA
hFE∗ DC Current Gain
IC = 0.1 mA
IC = 1 mA
IC = 10 mA
IC = 50 mA
IC = 100 mA
VCE = 1 V
VCE = 1 V
VCE = 1 V
VCE = 1 V
VCE = 1 V
fT
Transition Frequency IC = 10 mA VCE = 20 V f = 100 MHz
CCBO
Collector-Base
Capacitance
IE = 0 VCB = 10 V f = 1 MHz
CEBO
Emitter-Base
Capacitance
IC = 0 VEB = 0.5 V f = 1 MHz
NF Noise Figure
td
Delay Time
tr
Rise Time
VCE = 5 V IC = 0.1 mA f = 10 Hz
to 15.7 KHz RG = 1 KΩ
IC = 10 mA
VCC = 30 V
IB = 1 mA
ts
Storage Time
tf
Fall Time
IC = 10 mA
VCC = 30 V
∗ Pulsed: Pulse duration = 300 µs, duty cycle ≤ 2 %
IB1 = -IB2 = 1 mA
Min.
40
60
6
0.65
60
80
100
60
30
250
Typ.
270
4
18
5
Max.
50
50
0.2
0.2
0.85
0.95
300
35
35
200
50
Unit
nA
nA
V
V
V
V
V
V
V
MHz
pF
pF
dB
ns
ns
ns
ns
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