MMBTA92 Datasheet, PDF (2/4 Pages) NXP Semiconductors – PNP high-voltage transistor

MMBTA92
THERMAL DATA
Rthj-amb • Thermal Resistance Junction-Ambient
• Device mounted on a PCB area of 1 cm²
Max
357.1
o_C/W
ELECTRICAL CHARACTERISTICS (Tcase = 25 ^oC unless otherwise specified)
Symbol
Parameter
Test Conditions
ICBO
Collector Cut-off
Current (IE = 0)
V(BR)CBO Collector-Base
Breakdown Voltage
(IE = 0)
V(BR)CEO∗ Collector-Emitter
Breakdown Voltage
(IB = 0)
V(BR)EBO
Emitter-Base
Breakdown Voltage
(IC = 0)
VCE(sat)∗ Collector-Emitter
Saturation Voltage
VCB = -200 V
IC = -100 µA
IC = -1 mA
IE = -100 µA
IC = -20 mA IB = -2 mA
VBE(sat)∗ Base-Emitter
Saturation Voltage
IC = -20 mA IB = -2 mA
hFE∗ DC Current Gain
IC = -1 mA
IC = -10 mA
IC = -30 mA
VCE = -10 V
VCE = -10 V
VCE = -10 V
fT
Transition Frequency IC = -10 mA VCE = -20 V f = 50MHz
CCEO
Collector-Emitter
Capacitance
VCE = -20 V f = 1 MHz
∗ Pulsed: Pulse duration = 300 µs, duty cycle ≤ 1.5 %
Min.
-300
-300
-5
25
40
40
50
Typ.
50
Max.
-100
-0.5
-0.9
Unit
nA
V
V
V
V
V
MHz
pF
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