MJE521 Datasheet, PDF (2/4 Pages) Motorola, Inc – 4 AMPERE POWER TRANSISTOR NPN SILICON 40 VOLTS 40 WATTS

MJE521
THERMAL DATA
Rthj-amb Thermal Resistance Junction-ambient
Max
3.12
o_C/W
ELECTRICAL CHARACTERISTICS (Tcase = 25 ^oC unless otherwise specified)
Symbol
Parameter
Test Conditions
ICBO
Collector Cut-off
Current (IE = 0)
VCB = 40 V
IEBO
Emitter Cut-off Current VEB = 4 V
(IC = 0)
VCEO(sus)∗ Collector-Emitter
Sustaining Voltage
(IB = 0)
IC = 0.1 A
hFE DC Current Gain
IC = 1 A
∗ Pulsed: Pulse duration = 300µs, duty cycle ≤ 1.5%
VCE = 1 V
Min. Typ.
40
40
Max.
100
100
Unit
µA
µA
V
2/4