MJE3440 Datasheet, PDF (2/5 Pages) STMicroelectronics – SILICON NPN TRANSISTOR

MJE3440
THERMAL DATA
R_{thj-ca se} Thermal Resistance Junction-case
Max
8.33
o_C/W
ELECTRICAL CHARACTERISTICS (T_case = 25 ^oC unless otherwise specified)
Symb ol
I_CBO
ICEV
ICEO
P a ram et er
Collector Cut-off
Current (I_E = 0)
Collector Cut-off
Current (VBE = -1.5V)
Collector Cut-off
Current (IB = 0)
Test Conditions
V_CB = 250 V
VCE = 300 V
V_CE = 200 V
Min. Typ.
I_EBO
Emitter Cut-off Current
(I_C = 0)
V_EB = 5 V
V_{CE(sat )}∗
Co lle ct or- Em it t er
Saturation Voltage
I_C = 50 mA
V_{BE(s at)}∗
Ba se-Em it t er
Saturation Voltage
IC = 50 mA
V_BE∗ Base-Emitt er Voltage I_C = 50 mA
h_FE∗ DC Current G ain
IC = 2 mA
I_C = 20 mA
hf e
Small Signal Current
Gain
I_C = 5 mA
f = 1 KHz
f_T
Transistor Frequency
IC = 10 mA
f = 5 MHz
CCBO ∗
Co lle ct or- Bas e
Capacitance
V_CB = 10 V
f = 1 MHz
∗ Pulsed: Pulse duration = 300µs, duty cycle ≤ 1.5 %
I_B = 4 mA
IB = 4 mA
V_CE = 10 V
VCE = 10 V 30
V_CE = 10 V 50
V_CE = 10 V ₂₅
VCE = 10 V ₁₅
I_E = 0
M a x.
20
500
50
20
0.5
0.3
0.8
200
10
Unit
µA
µA
µA
µA
V
V
V
MHz
pF
Safe Operating Area
Derating Curve
2/5